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Published in:
01-05-2008
Microwave dielectric ceramics in the BaO–TiO2–ZnO system doped with Nb2O5
Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2008
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Abstract
The microwave dielectric properties of BaO–TiO2–ZnO (BTZ) system ceramics were studied as a function of the amount of Nb2O5 dopant. With the addition of 0–0.025 mol% Nb2O5, the substitution of Ti4+ ions with Nb5+ ions decreased the sintering temperature and increased the dielectric constant εr and quality factor Q of the system due to the similar atomic radius of Nb5+ and Ti4+ ions. When the amount of Nb5+ increased further (>0.025 mol%), Q was decreased by increasing the titanium vacancies. When the system doped with 0.025 mol% Nb2O5 was sintered at 1160 °C for 6 h, the εr, Qf0, and the temperature coefficient of resonant frequency (τf) were 36.7, 41,000 GHz, and −5.0 ppm/°C, respectively, at 5 GHz.