Anzeige
Erschienen in:
01.05.2008
Microwave dielectric ceramics in the BaO–TiO2–ZnO system doped with Nb2O5
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2008
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
The microwave dielectric properties of BaO–TiO2–ZnO (BTZ) system ceramics were studied as a function of the amount of Nb2O5 dopant. With the addition of 0–0.025 mol% Nb2O5, the substitution of Ti4+ ions with Nb5+ ions decreased the sintering temperature and increased the dielectric constant εr and quality factor Q of the system due to the similar atomic radius of Nb5+ and Ti4+ ions. When the amount of Nb5+ increased further (>0.025 mol%), Q was decreased by increasing the titanium vacancies. When the system doped with 0.025 mol% Nb2O5 was sintered at 1160 °C for 6 h, the εr, Qf0, and the temperature coefficient of resonant frequency (τf) were 36.7, 41,000 GHz, and −5.0 ppm/°C, respectively, at 5 GHz.