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Journal of Computational Electronics
Published in: Journal of Computational Electronics 4/2013

01-12-2013

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Authors: O. Nier, D. Rideau, Y. M. Niquet, F. Monsieur, V. H. Nguyen, F. Triozon, A. Cros, R. Clerc, J. C. Barbé, P. Palestri, D. Esseni, I. Duchemin, L. Smith, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen, L. Selmi

Published in: Journal of Computational Electronics | Issue 4/2013

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Abstract

Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green’s Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.
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Metadata
Title
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
Authors
O. Nier
D. Rideau
Y. M. Niquet
F. Monsieur
V. H. Nguyen
F. Triozon
A. Cros
R. Clerc
J. C. Barbé
P. Palestri
D. Esseni
I. Duchemin
L. Smith
L. Silvestri
F. Nallet
C. Tavernier
H. Jaouen
L. Selmi
Publication date
01-12-2013
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 4/2013
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-013-0532-1

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