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Journal of Computational Electronics

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01-12-2013

3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

Authors: F. M. Bufler, L. Smith

Published in: Journal of Computational Electronics | Issue 4/2013

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Abstract

The performance of FinFET and FDSOI devices is compared by 3D Monte Carlo simulation using an enhanced quantum correction scheme. This scheme has two new features: (i) the quantum correction is extracted from a 2D cross-section of the 3D device and (ii) in addition to using a modified oxide permittivity and a modified work function in subthreshold, the work function is ramped above threshold to a different value in the on-state. This approach improves the accuracy of the quantum-correction for multi-gate devices and is shown to accurately reproduce 3D density-gradient simulation also at short channel lengths. 15 nm FDSOI device performance with thin box and back-gate bias is found to be competitive: compared to a FinFET with (110)/〈110〉 sidewall/channel orientation, the on-current for N-type devices is 25 % higher and the off-current is only increased by a factor of 2.5.

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Colinge, J.P.: Multi-gate SOI MOSFETs. Microelectron. Eng. 84, 2071–2076 (2007) CrossRef

Planes, N., Weber, O., Barral, V., Haendler, S., Noblet, D., Croain, D., Bocat, M., Sassoulas, P.-O., Federspiel, X., Cros, A., Bajolet, A., Richard, E., Dumont, B., Perreau, P., Petit, D., Golanski, D., Fenouillet-Bérange, C., Guillot, N., Rafik, M., Huard, V., Puget, S., Montagner, X., Jaud, M.-A., Rozeau, O., Saxod, O., Wacquant, F., Monsieur, F., Barge, D., Pinzelli, L., Mellier, M., Boeuf, F., Arnaud, F., Haond, M.: 28nm FDSOI technology platform for high-speed low-voltage digital applications. In: Symp. on VLSI Tech., Honolulu, Hawaii, June 2012, pp. 133–134 (2012)

Basker, V.S., Standaert, T., Kawasaki, H., Yeh, C.-C., Maitra, K., Yamashita, T., Faltermeier, J., Adhikari, H., Jagannathan, H., Wang, J., Sunamura, H., Kanakasabapathy, S., Schmitz, S., Cummings, J., Inada, A., Lin, C.-H., Kulkarni, P., Zhu, Y., Kuss, J., Yamamoto, T., Kumar, A., Wahl, J., Yagishita, A., Edge, L.F., Kim, R.H., McIellan, E., Holmes, S.J., Johnson, R.C., Levin, T., Demarest, J., Hane, M., Takayanagi, M., Colburn, M., Paruchuri, V.K., Miller, R.J., Bu, H., Doris, B., McHerron, D., Leobandung, E., O’Neill, J.: A 0.063 μm² FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch. In: Symp. on VLSI Tech., Honolulu, Hawaii, June 2010, pp. 19–20 (2010)

Bufler, F.M., Heinz, F.O., Smith, L.: Efficient 3D Monte Carlo simulation of orientation and stress effects in FinFETs. In: Proc. SISPAD, Glasgow, UK, September 2013, pp. 172–175 (2013)

Fischetti, M.V., Laux, S.E.: Monte Carlo study of electron transport in silicon inversion layers. Phys. Rev. B 48(4), 2244–2274 (1993) CrossRef

Jungemann, C., Emunds, A., Engl, W.L.: Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid-State Electron. 36, 1529–1540 (1993) CrossRef

Saint-Martin, J., Bournel, A., Monsef, F., Chassat, C., Dollfus, P.: Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas. Semicond. Sci. Technol. 21, L29–L31 (2006) CrossRef

Lucci, L., Palestri, P., Esseni, D., Bergagnini, L., Selmi, L.: Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs. IEEE Trans. Electron Devices 54, 1156–1164 (2007) CrossRef

Sampedro, C., Gámiz, F., Godoy, A., Valin, R., Garcia-Loureiro, A., Ruiz, F.G.: Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI. Solid-State Electron. 54, 131–136 (2010) CrossRef

10.

Winstead, B., Ravaioli, U.: A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation. IEEE Trans. Electron Devices 50, 440–446 (2003) CrossRef

11.

Palestri, P., Eminente, S., Esseni, D., Fiegna, C., Sangiorgi, E., Selmi, L.: An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation. Solid-State Electron. 49, 727–732 (2005) CrossRef

12.

Ghetti, A., Carnevale, G., Rideau, D.: Coupled mechanical and 3-D Monte Carlo simulation of silicon nanowire MOSFETs. IEEE Trans. Nanotechnol. 6, 659–666 (2007) CrossRef

13.

Mori, T., Azuma, Y., Tsuchiya, H., Miyoshi, T.: Comparative study on drive current of III–V semiconductor, Ge, and Si channel n-MOSFETs based on quantum-corrected Monte Carlo simulation. IEEE Trans. Nanotechnol. 7, 237–241 (2008) CrossRef

14.

Hudé, R., Villanueva, D., Clerc, R., Ghibaudo, G., Robilliart, E.: A simple approach to account for the impact of quantum confinement on the charge in semiclassical Monte Carlo simulations of bulk nMOSFETs. In: Proc. ULIS, Bologna, Italy, April 2005, pp. 159–162 (2005)

15.

Bufler, F.M., Hudé, R., Erlebach, A.: On a simple and accurate quantum correction for Monte Carlo simulation. J. Comput. Electron. 5, 467–469 (2006) CrossRef

16.

Pham, A.T., Jungemann, C., Meinerzhagen, B.: Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates. Solid-State Electron. 52, 1437–1442 (2008) CrossRef

17.

Bufler, F.M., Heinz, F.O., Tsibizov, A., Oulmane, M.: Simulation of 〈110〉 nMOSFETs with a tensile strained cap layer. ECS Trans. 16(10), 91–100 (2008) CrossRef

18.

Bufler, F.M., Erlebach, A., Oulmane, M.: Hole mobility model with silicon inversion layer symmetry and stress-dependent piezoconductance coefficients. IEEE Electron Device Lett. 30, 996–998 (2009) CrossRef

19.

Jacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials. Rev. Mod. Phys. 55, 645–705 (1983) CrossRef

20.

Bufler, F.M., Meinerzhagen, B.: Hole transport in strained Si_1−xGe_x alloys on Si_1−yGe_y substrates. J. Appl. Phys. 84, 5597–5602 (1998) CrossRef

21.

Akarvardar, K., Young, C.D., Baykan, M.O., Ok, I., Ngai, T., Ang, K.-W., Rodgers, M.P., Gausepohl, S., Majhi, P., Hobbs, C., Kirsch, P.D., Jammy, R.: Impact of fin doping and gate stack on FinFET (110) and (100) electron and hole mobilities. IEEE Electron Device Lett. 33, 351–353 (2012) CrossRef

22.

Granzner, R., Polyakov, V.M., Schwierz, F., Kittler, M., Doll, T.: On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs. Physica E 19, 33–38 (2003) CrossRef

23.

Bufler, F.M., Erlebach, A.: Monte Carlo simulation of the performance dependence on surface and channel orientation in scaled pFinFETs. In: Proc. ESSDERC, Montreux, Switzerland, September 2006, pp. 174–177 (2006)

24.

Bufler, F.M., Keith, S., Meinerzhagen, B.: Anisotropic ballistic in-plane transport of electrons in strained Si. In: Proc. SISPAD, Leuven, Belgium, September 1998, pp. 239–242 (1998)

Title: 3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
Authors: F. M. Bufler
L. Smith
Publication date: 01-12-2013
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 4/2013
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-013-0518-z

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