Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Computational Electronics
Published in: Journal of Computational Electronics 5/2021

07-07-2021

Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes

Authors: Okba Saidani, Souad Tobbeche, Elhadj Dogheche, Bandar Alshehri

Published in: Journal of Computational Electronics | Issue 5/2021

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

This paper presents a numerical simulation study of p-i-n photodiodes based on In0.1Ga0.9 N/GaN multiple quantum wells (MQWs) of 2.5-nm-thick In0.1Ga0.9 N QWs and 12-nm-thick GaN barriers embedded into the intrinsic regions. The device performance is evaluated by investigating both the spectral and the frequency responses. The simulated 10-period In0.1Ga0.9 N/GaN MQW photodiode exhibits a peak responsivity of 0.25 A/W at 0.35 μm under a light power density of 0.1 W.cm−2 at -2 V reverse bias voltage and a cutoff frequency of 460 MHz. The effects of the number of quantum wells, reverse bias voltage and polarization on the spectral and frequency responses are then investigated. It is found that the maximum responsivity is 0.29 A/W at 0.35 μm and the cutoff frequency is 8.2 GHz for a 15-period In0.1Ga0.9 N/GaN MQW structure under a reverse bias of -10 V and a polarization scale factor of 0.25. Increasing the polarization scale factor degrades the responsivity performance due to the increased recombination of photocarriers. On the other hand, the cutoff frequency increases significantly with polarization and reaches a high value of 28 GHz for a polarization scale factor of 0.9 due to the increase of the polarization-induced field in the QWs.
previous article Excitation enhancement of surface plasmon polaritons from an annular plasmonic coupler based on internal corrugations and a central nanowire
next article Optical and W-shaped bright solitons of the conformable derivative nonlinear differential equation

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
Mishra, P., Janjua, B., Ng, T.K., Shen, C., Salhi, A., Alyamani, A.Y., El-Desouki, M.M., Ooi, B.S.: Achieving uniform carrier distribution in mbe-grown compositionally graded ingan multiple-quantum-well leDs. IEEE Photonics J 7(3), 1–9 (2015)CrossRef
2.
Li, K.H., Cheung, Y.F., Fu, W.Y., Wong, K.K., Choi, H.W.: Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides. IEEE J. Sel. Top. Quantum Electron 24(6), 1–6 (2018)
3.
Bhuiyan, A.G., Sugita, K., Hashimoto, A., Yamamoto, A.: InGaN solar cells: present state of the art and important challenges. IEEE J. Photovoltaics 2(3), 276–293 (2012)CrossRef
4.
Young, N.G., Perl, E.E., Farrell, R.M., Iza, M., Keller, S., Bowers, J.E., Nakamura, S., DenBaars, S.P., Speck, J.S.: High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration. Appl Phys Letters. 104(16), 163902 (2014)CrossRef
5.
Oder, T.N., Li, J., Lin, J.Y., Jiang, H.X.: Photoresponsivity of ultraviolet detectors based on In x Aly Ga1 − x − y N quaternary alloys. Appl. Phys. Lett. 77(6), 791–793 (2000)CrossRef
6.
Sandvik, P., Mi, K., Shahedipour, F., McClintock, R., Yasan, A., Kung, P., Razeghi, M.: AlxGa1− xN for solar-blind UV detectors. J. Cryst. Growth. 231(3), 366–370 (2001)CrossRef
7.
Monroy, E., Calle, F., Pau, J.L., Munoz, E., Omnes, F., Beaumont, B., Gibart, P.: Application and performance of GaN based UV detectors. physica status solidi (a) 185(1), 91–97 (2001)
8.
Parish, G., Keller, S., Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P.T., Fleischer, S.B., DenBaars, S.P., Mishra, U.K.: High-performance (Al, Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN. Appl. Phys. Lett. 75(2), 247–249 (1999)CrossRef
9.
Wu, J, Walukiewicz, W., Yu, K.M., Shan, W., Ager III, J.W.: Superior radiation resistance of In1− x Ga x N alloys: Full-solar-spectrum photovoltaic material system. J. Appl. Phys. 94(10), 6477–6482 (2003)
10.
Wu, J.: When group-III nitrides go infrared: new properties and perspectives. J. Appl. Phys. 106(1), 5 (2009)
11.
Yamamoto, A., Islam, M.R., Kang, T., Hashimoto, A.: Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells. Phys. status solidi c. 7(5), 1309–1316 (2010)CrossRef
12.
David, A., Grundmann, M.J.: Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl. Phys. Lett. 97(3), 033501 (2010)
13.
Bi, Z., Zhang, J., Lv, L., Hao, Y.: The effect of 3-MeV proton irradiation on the performance of InGaN/GaN MQWs solar cells. IEEE Photonics Technol. Lett. 26(15), 1492–1494 (2014)CrossRef
14.
Henini, M.: III-V nitrides for electronic and UV applications. III-Vs Rev. 12(5), 28–32 (1999)
15.
Davis, R.F.: III-V nitrides for electronic and optoelectronic applications. Proc. IEEE. 79(5), 702–712 (1991)CrossRef
16.
Monroy, E., Muñoz, E., Sánchez, F.J., Calle, F., Calleja, E., Beaumont, B., Gibart, P., Muñoz, J.A., Cussó, F.: High-performance GaN p-n junction photodetectors for solar ultraviolet applications. Semicond. Sci. Technol. 13(9), 1042 (1998)CrossRef
17.
Carrano, J.C., Li, T., Eiting, C.J., Dupuis, R.D., Campbell, J.C.: Very high-speed ultraviolet photodetectors fabricated on GaN. J. Electron. Mater. 28(3), 325–333 (1999)CrossRef
18.
Carrano, J.C., Li, T., Brown, D.L., Grudowski, P.A., Eiting, C.J., Dupuis, R.D., Campbell, J.C.: Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN. Appl. Phys. Lett. 73(17), 2405–2407 (1998)CrossRef
19.
Saron, K.M.A., Hashim, M.R., Farrukh, M.A.: Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications. Superlattices Microstruct. 64, 88–97 (2013)CrossRef
20.
Butun, B., Tut, T., Ulker, E., Yelboga, T., Ozbay, E.: High-performance visible-blind GaN-based p-i-n photodetectors. Appl. Phys. Lett. 92(3), 033507 (2008)
21.
Wang, G., Lu, H., Chen, D., Ren, F., Zhang, R., Zheng, Y.: High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates. IEEE Photonics Technol. Lett. 25(7), 652–654 (2013)CrossRef
22.
Huang, Y.-T., Yeh, P.S., Huang, Y., Chen, Y., Huang, C., Lin, C.J., Yeh, W.: High-performance InGaN pin photodetectors using LED structure and surface texturing. IEEE Photonics Technol. Lett. 28(6), 605–608 (2015)CrossRef
23.
Pereiro, J., Rivera, C., Navarro, A., Munoz, E., Czernecki, R., Grzanka, S., Leszczynski, M.: Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance. IEEE J. Quantum Electron. 45(6), 617–622 (2009)CrossRef
24.
Alshehri, B., Dogheche, K., Belahsene, S., Ramdane, A., Patriarche, G., Decoster, D., Dogheche, E.: Dynamic characterization of III-nitride-based high-speed photodiodes. IEEE Photonics J. 9(4), 1–7 (2017)CrossRef
25.
Shen, C., Lee, C., Stegenburgs, E., Lerma, J.H., Ng, T.K., Nakamura, S., DenBaars, S.P., Alyamani, A.Y., El-Desouki, M.M., Ooi, B.S.: Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Applied Physics Express 10(4), 042201 (2017)
26.
Huang, Z.-D., Weng, W.-Y., Chang, S.-J., Hua, Y.-F., Chiu, C.-J., Hsueh, T.-J., Wu, S.-L.: InGaN/GaN multiquantum-well metal-semiconductor-metal photodetectors with beta-ga2o3 cap layers. IEEE Sens. J. 13(4), 1187–1191 (2012)CrossRef
27.
Rivera, C., Pau, J.L., Muñoz, E.: Photocurrent gain mechanism in Schottky barrier photodiodes with negative average electric field. Appl. Phys. Lett. 89(26), 263505 (2006)
28.
Fiorentini, V., Bernardini, F., Ambacher, O.: Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl. Phys. Lett. 80(7), 1204–1206 (2002)CrossRef
29.
Chang, J.-Y., Kuo, Y.-K.: Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN pin solar cells. IEEE Electron Device Lett. 32(7), 937–939 (2011)CrossRef
30.
Zhang, Y., Shen, S.-C., Kim, H.J., Choi, S., Ryou, J.-H., Dupuis, R.D., Narayan, B.: Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates. Appl. Phys. Lett. 94(22), 221109 (2009)
31.
Ho, K.-T, Chen, R., Liu, G., Shen, C., Holguin-Lerma, J., Al-Saggaf, A.A., Ng, T.K., Alouini, M.-S., He, J.-H., Ooi, B.S.: 3.2 Gigabit-per-second visible light communication link with InGaN/GaN MQW micro-photodetector. Opt. Express 26(3), 3037–3045 (2018)
32.
Huang, B., Xu, J., Wang, L., Zhang, Y., Li, X.: Performance of back-illuminated In0.09 Ga0.91 N-based p–i–n photodetector. Opt. Quantum Electron. 49(4), 138 (2017)
33.
Elbar, M., Alshehri, B., Tobbeche, S., Dogheche, E.: Design and Simulation of InGaN/GaN p–i–n Photodiodes. Phys. status solidi (a) 215(9), 1700521 (2018)CrossRef
34.
Software, D. S. Atlas User ’ s Manual. 567–1000 (2016).
35.
Alshehri, B., Dogheche, K., Belahsene, S., Janjua, B., Ramdane, A., Patriarche, G., Ng, T.-K., Boon, S.-O., Decoster, D., Dogheche, E.: Synthesis of In 0.1 Ga 0.9 N/GaN structures grown by MOCVD and MBE for high speed optoelectronics. MRS Adv. 1(23), 1735–1742 (2016)
36.
Wu, J., Walukiewicz, W.: Band gaps of InN and group III nitride alloys. Superlattices Microstruct. 34(1–2), 63–75 (2003)CrossRef
37.
Zhang, X., Wang, X., Xiao, H., Yang, C., Ran, J., Wang, C., Hou, Q., Li, J.: Simulation of In0. 65Ga0. 35 N single-junction solar cell. J. Phys. D. Appl. Phys. 40(23), 7335 (2007)
38.
Belghouthi, R., Taamalli, S., Echouchene, F., Mejri, H., Belmabrouk, H.: Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. Mater. Sci. Semicond. Process. 40, 424–428 (2015)CrossRef
39.
Piprek, J., Römer, F., Witzigmann, B.: On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements. Appl. Phys. Lett. 106(10), 101101 (2015)CrossRef
40.
Meneghini, M., Trivellin, N., Meneghesso, G., Zanoni, E., Zehnder, U., Hahn, B.: A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes. J. Appl. Phys. 106(11), 114508 (2009)CrossRef
41.
Bernardini, F., Fiorentini, V., Vanderbilt, D.: Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 56(16), R10024 (1997)CrossRef
42.
Dalfors, J., Bergman, J.P., Holtz, P.O., Sernelius, B.E., Monemar, B., Amano, H., Akasaki, I.: Optical properties of doped InGaN/GaN multiquantum-well structures. Appl. Phys. Lett. 74(22), 3299–3301 (1999)CrossRef
43.
Chouchen, B., El Aouami, A., Gazzah, M.H., Bajahzar, A., Feddi, E.M., Dujardin, F., Belmabrouk, H.: Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-multi-quantum well solar cells. Optik. 199, 163385 (2019)CrossRef
44.
Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., Li, X., Ma, Z., Wang, K., Patanè, A.: High Responsivity and Wavelength Selectivity of GaN-Based Resonant Cavity Photodiodes. Adv. Opt. Mater. 8(7), 1901276 (2020)CrossRef
45.
Redaelli, L., Mukhtarova, A., Ajay, A., Núñez-Cascajero, A., Valdueza-Felip, S., Bleuse, J., Durand, C., Eymery, J., Monroy, E.: Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells. Jpn. J. Appl. Phys. 54(7), 72302 (2015)CrossRef
46.
Zhao, D.G., Jiang, D.S., Zhu, J.J., Wang, H., Liu, Z.S., Zhang, S.M., Yang, H.: Hole concentration test of p-type GaN by analyzing the spectral response of p–n+ structure GaN ultraviolet photodetector. J. Alloys Compd. 492(1–2), 300–302 (2010)CrossRef
47.
Kuo, Y.-K., Lin, H.-W., Chang, J.-Y., Chen, Y.-H., Chang, Y.-A.: Polarization effect on the photovoltaic characteristics of Al0. 14Ga0. 86N/In0. 21Ga0. 79N superlattice solar cells. IEEE electron device Lett. 33(8), 1159 (2012)
Metadata
Title
Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes
Authors
Okba Saidani
Souad Tobbeche
Elhadj Dogheche
Bandar Alshehri
Publication date
07-07-2021
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 5/2021
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-021-01728-1

Other articles of this Issue 5/2021

Journal of Computational Electronics 5/2021 Go to the issue

OriginalPaper

Design and analysis of SHE-assisted STT MTJ/CMOS logic gates

OriginalPaper

Coupled NEGF-PSO method for maximizing the current ratio of CNTFETs based on oxide thickness optimization

OriginalPaper

Method to enhance resonant interlayer tunneling in bilayer-graphene systems

OriginalPaper

Design and simulation of reliable and fast nanomagnetic conservative quantum-dot cellular automata (NCQCA) gate

OriginalPaper

A novel design of CTZS/Si tandem solar cell: a numerical approach

OriginalPaper

Capacitance–resistance modeling of an inverter based on a nanoscale side-contacted field-effect diode with an overshoot suppression approach