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Published in: Journal of Materials Science: Materials in Electronics 20/2017

07-07-2017

One-pot synthesis of CTAB stabilized mesoporous cobalt doped CuS nano flower with enhanced pseudocapacitive behavior

Authors: Surekha Podili, D. Geetha, P. S. Ramesh

Published in: Journal of Materials Science: Materials in Electronics | Issue 20/2017

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Abstract

In this study, we prepared porous CuS and Cobalt (Co) doped copper sulfide (CuS) nano flower by hydrothermal route. Cationic surfactant cetyl trimethyl ammonium bromide (CTAB) was used as stabilizer and copper nitrate, cobalt nitrate as precursors, thiourea as sulfur source and ethylene glycol as solvent. Structural, functional, optical properties, morphological, surface area and chemical nature of the as-synthesized samples were thoroughly characterized by XRD, FTIR, UV–Vis, SEM/EDS, TEM, BET and XPS techniques respectively. The optical band gap of CuS and Cobalt doped CuS nano flowers was estimated between 1.9 and 2.52 eV. The scanning electron microscopy and transmission electron microscopy images demonstrate flower like nanostructures with length around 140 nm. Then the synthesized samples were utilized for electrochemical performance to modify the glassy carbon electrode (GCE). The electrochemical performance of the as-synthesized CTAB/CuS and CTAB/Cobalt (0.15 mM) doped CuS material was studied by cyclic voltammetry and electrical impedance spectroscopy. These results demonstrate that CTAB/cobalt doped CuS electrode delivered a high specific capacitance of 586.45 Fg-1 in a2M KOH aqueous electrolyte at 5 mV/s and indicating their potential application as promising electrode materials for supercapacitors.

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Metadata
Title
One-pot synthesis of CTAB stabilized mesoporous cobalt doped CuS nano flower with enhanced pseudocapacitive behavior
Authors
Surekha Podili
D. Geetha
P. S. Ramesh
Publication date
07-07-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 20/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7424-2

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