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Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics Read chapter Read first chapter

2018 | OriginalPaper | Chapter

4. Reliability of GaN-Based Power Devices

Authors : Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, Isabella Rossetto

Published in: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Publisher: Springer International Publishing

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Abstract

No new product is possible without reliability: this is especially true for new and emerging technology, such as gallium nitride-based devices. For GaN power transistors, breakdown mechanisms play a significant role. The reduction of the robustness and of the long-term reliability still represents a serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.

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previous chapter Vertical GaN Transistors for Power Electronics
next chapter Validating GaN Robustness
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Metadata
Title
Reliability of GaN-Based Power Devices
Authors
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Maria Ruzzarin
Isabella Rossetto
Copyright Year
2018
Book
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Print ISBN: 978-3-319-77993-5

Electronic ISBN: 978-3-319-77994-2

Copyright Year: 2018

DOI
https://doi.org/10.1007/978-3-319-77994-2_4