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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 24/2019

18-11-2019

Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices

Authors: Ruqi Chen, Wei Hu, Aize Hao, Dinghua Bao

Published in: Journal of Materials Science: Materials in Electronics | Issue 24/2019

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Abstract

Orthorhombic Bi2SiO5 thin films were fabricated on Pt/Ti/SiO2/Si substrates by incorporating a NiO thin layer between Bi2SiO5 and bottom electrode. Compared with those bare Pt/Bi2SiO5/Pt devices, a remarkably improved uniformity of resistive switching parameters such as electroforming voltages, reset voltages, and a resistance ratio of low/high states was demonstrated in the Bi2SiO5 devices with an embedded NiO layer. This improvement was attributed to the formation of the partial conductive filaments resulted from sufficient oxygen vacancies at the interface. Our results provide a method for the optimization of the operation voltage control toward forefront applications in nonvolatile memory.
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Metadata
Title
Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices
Authors
Ruqi Chen
Wei Hu
Aize Hao
Dinghua Bao
Publication date
18-11-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 24/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02530-3

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