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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2014

01-04-2014

Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode

Authors: Hongwei Liang, Qiuju Feng, Xiaochuan Xia, Rong Li, Huiying Guo, Kun Xu, Pengcheng Tao, Yuanpeng Chen, Guotong Du

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2014

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Abstract

The highly arrayed arsenic doped p-ZnO nanowires/n-ZnO thin film homojunction light-emitting diode was fabricated on semi-insulated Si substrate. The homojunction was consisted of high-quality n-ZnO thin film grown by metal–organic chemical vapor deposition technology following arsenic doped ZnO nanowires grown by chemical vapor deposition. The device shows good rectification characteristic with a turn-on voltage of ~4.8 V and reverse breakdown voltage of ~18 V. Moreover, two distinct electroluminescence bands centered at 2.35 and 3.18 eV are detected from this device under forward bias at room temperature.
previous article Properties of porous Si3N4 ceramic electromagnetic wave transparent materials prepared by technique combining freeze drying and oxidation sintering
next article Annealing effect on the structural, electrical and 1/f noise properties of Mn–Co–Ni–O thin films

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Metadata
Title
Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode
Authors
Hongwei Liang
Qiuju Feng
Xiaochuan Xia
Rong Li
Huiying Guo
Kun Xu
Pengcheng Tao
Yuanpeng Chen
Guotong Du
Publication date
01-04-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1828-z

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