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Published in:
1984 | OriginalPaper | Chapter
Secondary Ion Emission from Si Subjected to Oxygen Ion Bombardment
Authors : T. Ohwaki, Y. Taga, K. Satta
Published in: Secondary Ion Mass Spectrometry SIMS IV
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
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In practical SIMS ,O2+ ion beam is generally used as primary species. However there have been little systematic and reliable data on the yields of spattering and secondary ion emission from a material subjected to 02+ ion bombardment[1,2,3,4,5].On the other hand,an understanding of secondary ion emission mechanism requires the measurements of secondary ion yields and energy distribution [6,7,8]. In this paper,we describe the results of secondary ion emission from Si under O2+ ion bombardment.