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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

Simulation of Ion Sputtering Process on the Binary Alloy

Authors : T. Koshikawa, T. Ikuta, R. S. Li

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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The composition of the alloy sputtered with low energy ions changes very much by the effect of the preferential sputtering, segregation of the constituent atoms to the surface and the ion-enhanced diffusion [1–7]. The simulation of the sputtering including the segregation and the ion enhanced diffusion with computer has advantage in order to understand the sputtering mechanism of the alloys.

previous chapter Molecular Dynamics Computer Simulation Study of the Damage Produced in Metal Target Surfaces During Ion Bombardment
next chapter Secondary Ion Emission from Si Subjected to Oxygen Ion Bombardment
Metadata
Title
Simulation of Ion Sputtering Process on the Binary Alloy
Authors
T. Koshikawa
T. Ikuta
R. S. Li
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_8