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Published in:
2001 | OriginalPaper | Chapter
Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics
Authors : Yutao Ma, Lifeng Chen, Bo Jiang, Min Zhang, Lilin Tian, Zhiping Yu, Litian Liut, Zhijian Li
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
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Advanced n-MOSFET structure with featured size of 90nm channel length is simulated using a newly developed Quantum Mechanical (QM) correction model based on Modified Airy Function (MAF) method. The influences of Quantum Mechanical Effects (QMEs) on the carrier distribution in the whole channel is included and the output as well as the transfer characteristics are compared with and without QM correction. It is demonstrated that QMEs result in more severe short channel effects such as threshold voltage roll off and DIBL effects.