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Erschienen in:
2001 | OriginalPaper | Buchkapitel
Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics
verfasst von : Yutao Ma, Lifeng Chen, Bo Jiang, Min Zhang, Lilin Tian, Zhiping Yu, Litian Liut, Zhijian Li
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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Advanced n-MOSFET structure with featured size of 90nm channel length is simulated using a newly developed Quantum Mechanical (QM) correction model based on Modified Airy Function (MAF) method. The influences of Quantum Mechanical Effects (QMEs) on the carrier distribution in the whole channel is included and the output as well as the transfer characteristics are compared with and without QM correction. It is demonstrated that QMEs result in more severe short channel effects such as threshold voltage roll off and DIBL effects.