2001 | OriginalPaper | Buchkapitel
Model of Pocket-Implant Mosfets for Circuit Simulation
verfasst von : D. Kitamaru, H. Ueno, M. Tanaka, M. Miura-Mattausch, K. Morikawa, K. Morikawa, H. J. Mattausch, K. Mattausch, S. Kumashiro, T. Yamaguchi, N. Nakayama
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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A new threshold voltage (Vth) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only two parameters; the maximum doping concentration (N su h p ) of the pocket profile and the penetration length (L o ) into the channel. The model reproduces the measured Vth vs. gate-length (Lgate) characteristics with an average error of a few mV under any bias conditions.