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Journal of Computational Electronics

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01-03-2015

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

Author: Christoph Jungemann

Published in: Journal of Computational Electronics | Issue 1/2015

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Abstract

Hopping transport in disordered organic semiconductors can be described by a master equation, where the hopping process is a Poisson process, which leads to a white local noise source. With a modified Ramo-Shockley theorem the terminal current noise can be calculated by the Langevin approach. A 1D structure of a homogeneous disordered organic semiconductor is investigated. Due to the slow processes in organic semiconductors, the noise shows a strong frequency dependence at rather low frequencies without considering 1/f noise or traps. If the current is determined by the injection barrier at the contact, the low frequency noise is shot noise at sufficiently large currents.

previous article Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver

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Title: Simulation of electronic noise in disordered organic semiconductor devices based on the master equation
Author: Christoph Jungemann
Publication date: 01-03-2015
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 1/2015
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-014-0619-3

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