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Published in:
2001 | OriginalPaper | Chapter
Simulation of Flash Memory Programming Characteristics
Authors : K. Matsuzawa, T. Ishihara
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
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A practical approach is presented to simulate programming characteristics of Flash memories. The current continuity equation for carriers injected in Si02 is embedded in the Poisson equation. The amount of hot electrons at the interface of substrate and Si02 is used as the fixed boundary condition for NOR-Flash, whereas spatial distribution of the FN tunnelling probability in Si02 is considered for NAND-Flash.