Skip to main content
Top
Published in: Journal of Materials Science: Materials in Electronics 17/2020

29-07-2020

Structural characterization, dielectric, and magnetic properties of Ti-doped YFeO3 multiferroic compound

Authors: M. Solórzano, A. Durán, R. López, J. Mata, R. Falconi

Published in: Journal of Materials Science: Materials in Electronics | Issue 17/2020

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Crystal structure, and magnetic and dielectric properties were studied in Ti-doped YFeO3 polycrystalline samples. The crystal structure and chemical state of the Fe/Ti cations were characterized by a combination of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It is found that a narrow solid-solubility limit is achieved (~ 6%) and the d0–ness of Ti4+ is not favored in the YFeO3 matrix. A change in the valence states of Fe and Ti cations explains not only the low solubility limit but also the anomalous increase of the volume cell. Soft magnetic hysteresis curves in the M vs H curves indicate that the weak ferromagnetic contribution prevails for all the studied samples. Furthermore, by means of differential calorimetry (DSC) it was possible to identify the AFM transition which decreases with increasing Ti content. On the other hand, the change of the step-like anomaly to a broad peak in the permittivity (ε′) and loss tangent (tan δ) as Ti content increases resemble to a relaxor ferroelectric transition. The endothermic peak (DSC) around the magnetic transition and the broad peaks in the ε′(T) data seem to indicate the existence of a local polarization coupled with AFM transition at ~ 650 K. Two types of charge carriers were found in the doped systems, oxygen vacancies at high temperatures, and small polarons at low temperatures, respectively. Besides, it is found that the introduction of those charge carriers in the YFeO3 matrix occurs by the change of oxidation state from Fe3+ to Fe2+ through Ti3+.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference R.L. White, J. Appl. Phys. 40, 1061–16069 (1969) R.L. White, J. Appl. Phys. 40, 1061–16069 (1969)
2.
go back to reference R.M. White, R.J. Nemanich, C. Herring, Phys. Rev B 25, 1822 (1982) R.M. White, R.J. Nemanich, C. Herring, Phys. Rev B 25, 1822 (1982)
3.
go back to reference M. Eibschütz, S. Shtikman, D. Treves, Phys. Rev. 156, 562–577 (1967) M. Eibschütz, S. Shtikman, D. Treves, Phys. Rev. 156, 562–577 (1967)
4.
go back to reference N.A. Spaldin, S.W. Cheong, R. Ramesh, Phys Tod. 63, 38–43 (2010) N.A. Spaldin, S.W. Cheong, R. Ramesh, Phys Tod. 63, 38–43 (2010)
5.
go back to reference Y. Arimoto, H. Ishiwara, MRS Bull. 29, 823–828 (2004) Y. Arimoto, H. Ishiwara, MRS Bull. 29, 823–828 (2004)
6.
go back to reference G. Catalan, J.F. Scott, Adv. Mater. 24, 2463–2485 (2009) G. Catalan, J.F. Scott, Adv. Mater. 24, 2463–2485 (2009)
7.
go back to reference M. Čebela, D. Zagorac, K. Batalović et al., Ceram. Int. 43, 1256–1264 (2017) M. Čebela, D. Zagorac, K. Batalović et al., Ceram. Int. 43, 1256–1264 (2017)
8.
go back to reference C. Zhang, J. Su, X. Wang et al., J. Alloys Compd. 509, 7738–7741 (2011) C. Zhang, J. Su, X. Wang et al., J. Alloys Compd. 509, 7738–7741 (2011)
9.
go back to reference H. Shen, J. Xu, A. Wu et al., Mater. Sci. Eng. B. 157, 77–80 (2009) H. Shen, J. Xu, A. Wu et al., Mater. Sci. Eng. B. 157, 77–80 (2009)
10.
go back to reference M. Shang, C. Zhang, T. Zhang et al., Appl. Phys. Lett. 102, 062903 (2013) M. Shang, C. Zhang, T. Zhang et al., Appl. Phys. Lett. 102, 062903 (2013)
11.
go back to reference J. Mao, Y. Sui, X. Zhang et al., Appl. Phys. Lett. 98, 192510 (2011) J. Mao, Y. Sui, X. Zhang et al., Appl. Phys. Lett. 98, 192510 (2011)
12.
go back to reference M.A. Ahmed, M.S. Selim, M.M. Arman, Mater. Chem. Phys. 129, 705–712 (2011) M.A. Ahmed, M.S. Selim, M.M. Arman, Mater. Chem. Phys. 129, 705–712 (2011)
13.
go back to reference A.M. Bolarín-Miró, F. Sánchez-De Jesús, C.A. Cortés-Escobedo et al., J. Alloys Compd. 586, 90–94 (2014) A.M. Bolarín-Miró, F. Sánchez-De Jesús, C.A. Cortés-Escobedo et al., J. Alloys Compd. 586, 90–94 (2014)
14.
go back to reference X. Yuan, Y. Sun, M. Xu, J. Solid State Chem. 196, 362–366 (2012) X. Yuan, Y. Sun, M. Xu, J. Solid State Chem. 196, 362–366 (2012)
15.
go back to reference D. Van Tac, V.O. Mittova, I.Y. Mittova, Inorg. Mater. 47, 521–526 (2011) D. Van Tac, V.O. Mittova, I.Y. Mittova, Inorg. Mater. 47, 521–526 (2011)
16.
go back to reference J.H. Lee, Y.K. Jeong, J.H. Park et al., Phys. Rev. Lett. 107, 117201 (2011) J.H. Lee, Y.K. Jeong, J.H. Park et al., Phys. Rev. Lett. 107, 117201 (2011)
17.
go back to reference Z.X. Cheng, H. Shen, J.Y. Xu et al., J. Appl. Phys. 111, 034103 (2012) Z.X. Cheng, H. Shen, J.Y. Xu et al., J. Appl. Phys. 111, 034103 (2012)
18.
go back to reference B. Rajeswaran, P. Mandal, R. Saha, E. Suard et al., Chem. Mater. 24, 3591–3595 (2012) B. Rajeswaran, P. Mandal, R. Saha, E. Suard et al., Chem. Mater. 24, 3591–3595 (2012)
19.
go back to reference S. Kovachev, D. Kovacheva, S. Aleksovska et al., AIP Conf. Proc. 1203, 199–204 (2010) S. Kovachev, D. Kovacheva, S. Aleksovska et al., AIP Conf. Proc. 1203, 199–204 (2010)
20.
go back to reference Y. Tokunaga, N. Furukawa, H. Sakai et al., Nat. Mater. 8, 558–562 (2009) Y. Tokunaga, N. Furukawa, H. Sakai et al., Nat. Mater. 8, 558–562 (2009)
21.
go back to reference Y. Tokunaga, S. Iguchi, T. Arima et al., Phys. Rev. Lett. 101, 3–6 (2008) Y. Tokunaga, S. Iguchi, T. Arima et al., Phys. Rev. Lett. 101, 3–6 (2008)
22.
go back to reference J. Rodríguez-Carvajal, Phys. B 192, 55–69 (1993) J. Rodríguez-Carvajal, Phys. B 192, 55–69 (1993)
23.
go back to reference R. Maiti, S. Basu, D. Chakravorty, J. Magn. Magn. Mater. 321, 3274–3277 (2009) R. Maiti, S. Basu, D. Chakravorty, J. Magn. Magn. Mater. 321, 3274–3277 (2009)
24.
go back to reference D. Du Boulay, E.N. Maslen, V.A. Streltsov et al., Acta Crystallogr. Sect. B 51, 921–929 (1995) D. Du Boulay, E.N. Maslen, V.A. Streltsov et al., Acta Crystallogr. Sect. B 51, 921–929 (1995)
25.
go back to reference R.D. Shannon, Acta Crystallogr. A 32, 751 (1976) R.D. Shannon, Acta Crystallogr. A 32, 751 (1976)
26.
go back to reference A.V. Naumkin, A. Kraut-Vass, NIST X-ray Photoelectron spectroscopy database Ver-sion (National Institute of Standards and Technology, Gaithersburg, 2012) A.V. Naumkin, A. Kraut-Vass, NIST X-ray Photoelectron spectroscopy database Ver-sion (National Institute of Standards and Technology, Gaithersburg, 2012)
27.
go back to reference V.V. Atuchin, V.G. Kesler, N.V. Pervukhina, Z. Zhang, J. Electron. Spectrosc. Relat. Phenomena 152, 18–24 (2006) V.V. Atuchin, V.G. Kesler, N.V. Pervukhina, Z. Zhang, J. Electron. Spectrosc. Relat. Phenomena 152, 18–24 (2006)
28.
go back to reference C. Badini, S.M. Deambrosis, E. Padovano et al., Materials 9, 961 (2016) C. Badini, S.M. Deambrosis, E. Padovano et al., Materials 9, 961 (2016)
29.
go back to reference S. Raut, P.D. Babu, R.K. Sharma et al., J. Appl. Phys. 123, 174101 (2018) S. Raut, P.D. Babu, R.K. Sharma et al., J. Appl. Phys. 123, 174101 (2018)
30.
go back to reference D. Treves, M. Eibschütz, P. Coppens, Phys. Lett. 18(3), 209 (1965) D. Treves, M. Eibschütz, P. Coppens, Phys. Lett. 18(3), 209 (1965)
31.
go back to reference E.F. Bertaut, Acta Crystallogr. A 24, 217–231 (1968) E.F. Bertaut, Acta Crystallogr. A 24, 217–231 (1968)
32.
go back to reference T. Yamaguchi, Phys. Chem. Solids. 35, 479–500 (1974) T. Yamaguchi, Phys. Chem. Solids. 35, 479–500 (1974)
33.
go back to reference S. Raut, B. Kar, S. Velaga et al., J. Appl. Phys. 126, 074103 (2019) S. Raut, B. Kar, S. Velaga et al., J. Appl. Phys. 126, 074103 (2019)
34.
go back to reference B. Deka, S. Ravi, A. Perumal et al., Ceram. Int. 43, 1323–1334 (2017) B. Deka, S. Ravi, A. Perumal et al., Ceram. Int. 43, 1323–1334 (2017)
35.
go back to reference Y. Ma, X.M. Chen, Y.Q. Lin, J. Appl. Phys. 103, 124111 (2008) Y. Ma, X.M. Chen, Y.Q. Lin, J. Appl. Phys. 103, 124111 (2008)
36.
go back to reference S. Mathur, M. Veith, R. Rapalaviciute et al., Chem. Mater. 16, 1906 (2004) S. Mathur, M. Veith, R. Rapalaviciute et al., Chem. Mater. 16, 1906 (2004)
37.
go back to reference W. Zhang, C. Fang, W. Yin et al., Mater. Chem. Phys. 137, 877–883 (2013) W. Zhang, C. Fang, W. Yin et al., Mater. Chem. Phys. 137, 877–883 (2013)
38.
go back to reference A. Durán, L. Moxca, H.A. Borbón-Núñez, SN Appl. Sci. 1, 1331 (2019) A. Durán, L. Moxca, H.A. Borbón-Núñez, SN Appl. Sci. 1, 1331 (2019)
39.
go back to reference S. Madolappa, B. Ponraj, R. Bhimireddi et al., J. Am. Ceram. Soc. 100, 2641–2650 (2017) S. Madolappa, B. Ponraj, R. Bhimireddi et al., J. Am. Ceram. Soc. 100, 2641–2650 (2017)
40.
go back to reference O. Raymond, R. Font, N. Suárez-Almodovar et al., J. Appl. Phys. 97, 084107 (2005) O. Raymond, R. Font, N. Suárez-Almodovar et al., J. Appl. Phys. 97, 084107 (2005)
41.
go back to reference C. Ang, Z. Yu, L. Cross, Phys. Rev. B 62, 228–236 (2000) C. Ang, Z. Yu, L. Cross, Phys. Rev. B 62, 228–236 (2000)
42.
go back to reference M.A. Tena, G. García-Belmonte, J. Bisquert, J. Mater. Sci. 31, 2043–2046 (1996) M.A. Tena, G. García-Belmonte, J. Bisquert, J. Mater. Sci. 31, 2043–2046 (1996)
43.
go back to reference A. Durán, E. Verdin, R. Escamilla et al., Mater. Chem. Phys. 133, 1011 (2012) A. Durán, E. Verdin, R. Escamilla et al., Mater. Chem. Phys. 133, 1011 (2012)
44.
go back to reference G.V. Subba Rao, B.M. Wanklyn, C.N.R. Rao, J. Phys. Chem. Solids 32, 345 (1971) G.V. Subba Rao, B.M. Wanklyn, C.N.R. Rao, J. Phys. Chem. Solids 32, 345 (1971)
Metadata
Title
Structural characterization, dielectric, and magnetic properties of Ti-doped YFeO3 multiferroic compound
Authors
M. Solórzano
A. Durán
R. López
J. Mata
R. Falconi
Publication date
29-07-2020
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 17/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04007-0

Other articles of this Issue 17/2020

Journal of Materials Science: Materials in Electronics 17/2020 Go to the issue