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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 18/2021

20-08-2021

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

Authors: Ishpal Rawal, Vipin Kumar, Vinod Kumar, Prikshit Gautam, Vijay Kumar Sharma

Published in: Journal of Materials Science: Materials in Electronics | Issue 18/2021

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Abstract

Here, we report the fabrication of the p-n hetero-junction devices of p-Zn1-xSbxO/n-Si− grown by utilizing the radio-frequency sputtering technique. The fabricated devices were analyzed for morphological and structural modifications under atomic force microscopy (AFM) and X-Ray diffraction (XRD) techniques. The AFM studies reveal the growth of agglomerated nanoparticles like structures distributed throughout the surfaces of the deposited films, whereas, XRD studies reveal the significant change in crystallite size, lattice parameters, stress and strain with the incorporation of antimony (Sb) in ZnO matrix. The conduction behavior of charge carriers has been systematically analyzed in the fabricated hetero-junction devices. Current–Voltage (I–V) characteristics reveal a trap free space charge limiting current conduction in the fabricated devices. The room temperature mobility of charge carriers for the pristine ZnO, Zn0.97Sb0.03O and Zn0.95Sb0.05O thin film devices are found to be 8.06 × 10–2, 19.0 × 10–2 and 40.69 × 10–2 cm2/Vs, respectively.
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Metadata
Title
Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices
Authors
Ishpal Rawal
Vipin Kumar
Vinod Kumar
Prikshit Gautam
Vijay Kumar Sharma
Publication date
20-08-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 18/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-06809-2

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