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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 18/2021

20.08.2021

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

verfasst von: Ishpal Rawal, Vipin Kumar, Vinod Kumar, Prikshit Gautam, Vijay Kumar Sharma

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 18/2021

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Abstract

Here, we report the fabrication of the p-n hetero-junction devices of p-Zn1-xSbxO/n-Si− grown by utilizing the radio-frequency sputtering technique. The fabricated devices were analyzed for morphological and structural modifications under atomic force microscopy (AFM) and X-Ray diffraction (XRD) techniques. The AFM studies reveal the growth of agglomerated nanoparticles like structures distributed throughout the surfaces of the deposited films, whereas, XRD studies reveal the significant change in crystallite size, lattice parameters, stress and strain with the incorporation of antimony (Sb) in ZnO matrix. The conduction behavior of charge carriers has been systematically analyzed in the fabricated hetero-junction devices. Current–Voltage (I–V) characteristics reveal a trap free space charge limiting current conduction in the fabricated devices. The room temperature mobility of charge carriers for the pristine ZnO, Zn0.97Sb0.03O and Zn0.95Sb0.05O thin film devices are found to be 8.06 × 10–2, 19.0 × 10–2 and 40.69 × 10–2 cm2/Vs, respectively.
Vorheriger Artikel Fabrication of polyethyleneimine surface-functionalized fluorescent carbon dots and its applications towards highly sensitive and selective detection of glutathione in aqueous medium and in vitro cell imaging of HeLa cells
Nächster Artikel Thermoelectric textile devices with thin films of nanocellulose and copper iodide

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Metadaten
Titel
Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices
verfasst von
Ishpal Rawal
Vipin Kumar
Vinod Kumar
Prikshit Gautam
Vijay Kumar Sharma
Publikationsdatum
20.08.2021
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 18/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-06809-2

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