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Journal of Materials Science: Materials in Electronics

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19-07-2018

ZnO based transparent thin film transistor grown by aerosol assisted CVD

Authors: Vipin K. Kaushik, C. Mukherjee, P. K. Sen

Published in: Journal of Materials Science: Materials in Electronics | Issue 17/2018

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Abstract

The communication reports the characterization of n\(^+\)-Al:ZnO/Al\(_2\)O\(_3\)/n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al\(_2\)O\(_3\) acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.

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Title: ZnO based transparent thin film transistor grown by aerosol assisted CVD
Authors: Vipin K. Kaushik
C. Mukherjee
P. K. Sen
Publication date: 19-07-2018
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 17/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-018-9657-0

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