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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 17/2018

19.07.2018

ZnO based transparent thin film transistor grown by aerosol assisted CVD

verfasst von: Vipin K. Kaushik, C. Mukherjee, P. K. Sen

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 17/2018

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Abstract

The communication reports the characterization of n\(^+\)-Al:ZnO/Al\(_2\)O\(_3\)/n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al\(_2\)O\(_3\) acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.
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Metadaten
Titel
ZnO based transparent thin film transistor grown by aerosol assisted CVD
verfasst von
Vipin K. Kaushik
C. Mukherjee
P. K. Sen
Publikationsdatum
19.07.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 17/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9657-0

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