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Published in: Journal of Materials Science: Materials in Electronics 4/2014

01-04-2014

Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters

Authors: J. Guo, J.-J. Xie, L.-M. Zhang, K. Kokh, Yu. Andreev, T. Izaak, G. Lanskii, A. Shaiduko, V. Svetlichnyi

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2014

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Abstract

The paper reports a first growth of the Al-doped GaSe crystals by modified technology with heat field rotation. These crystals shown from 2 to 3 times lower absorption coefficient at the maximal transparency range to that in crystals grown by conventional Bridgman technology. Possibility of the identification of optimal doping level in grown crystals by analysis of shape of the exciton absorption peak and intensity of the absorption shoulder at the transmission edge was demonstrated. The optimal doping can be attributed to the concentration of Al in the growth charge between 0.02 and 0.05 at.%. The result of the identification is confirmed by frequency conversion experiments: CO2 laser SHG and optical rectification of fs pulses.

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Metadata
Title
Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
Authors
J. Guo
J.-J. Xie
L.-M. Zhang
K. Kokh
Yu. Andreev
T. Izaak
G. Lanskii
A. Shaiduko
V. Svetlichnyi
Publication date
01-04-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1795-4

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