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Published in:
11-09-2018
Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method
Published in: Journal of Materials Science: Materials in Electronics | Issue 21/2018
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Abstract
Pb1.2−xCexZr0.52Ti0.48O3 (PCZT, x = 0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 µm were fabricated by sol–gel process and traditional annealing process on Pt/Ti/SiO2/Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb1.2−xCexZr0.52Ti0.48O3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb1.2−xCexZr0.52Ti0.48O3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.