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Published in: Journal of Materials Science: Materials in Electronics 8/2013

01-08-2013

Effect of Gd-substitution on phase transition and conduction mechanism of BiFeO3

Authors: Samita Pattanayak, R. N. P. Choudhary, Piyush R. Das

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2013

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Abstract

The polycrystalline sample of (Bi0.8Gd0.2)FeO3 was prepared by a high-temperature solid-state reaction technique. Preliminary X-ray structural analysis of the sample confirms the formation of the desired compound with rhombohedral phase. The scanning electron micrograph of the sample showed uniform distribution of the plate- and rod-shaped grains. Studies of dielectric and electrical properties of the material were investigated within a wide range of temperature (25–400 °C) and frequency (1 kHz–1 MHz) using complex impedance spectroscopic method. The observation of hysteresis loop of the material confirmed that the material has a ferroelectric property at room temperature. The ac conductivity suggests that the sample obey Jonscher’s universal power law. The dc conductivity follows Arrhenius equation. Detailed studies of ac and dc conductivity show a negative temperature coefficient of resistance (NTCR) behavior of the sample.

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Metadata
Title
Effect of Gd-substitution on phase transition and conduction mechanism of BiFeO3
Authors
Samita Pattanayak
R. N. P. Choudhary
Piyush R. Das
Publication date
01-08-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 8/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1168-4

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