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Semiconductors
Published in: Semiconductors 12/2016

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

Authors: M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov

Published in: Semiconductors | Issue 12/2016

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previous article Polariton condensate coherence in planar microcavities in a magnetic field
next article Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

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Metadata
Title
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
Authors
M. N. Koryazhkina
S. V. Tikhov
O. N. Gorshkov
A. P. Kasatkin
I. N. Antonov
Publication date
01-12-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616120095

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XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

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