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Published in:
2001 | OriginalPaper | Chapter
Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs
Authors : Jaehee Lee, Woo-Seock Cheong, Jae-Hoon Choi, Jae-Chul Om
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
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We report on the enhanced diffusion characteristics of phosphorus in SEG(selective epitaxial growth)-MOSFETs due to in-diffusion from BPSG (borophosphosilicate glass) layer. Because of structural complexity of SEGMOSFETs, three-dimensional simulation was implemented and our results successfully show that a great deal of impurity in-diffusion from BPSG to silicon layer generates a lot of interstitial. Therefore, the diffusivity of phosphorus is increased dramatically by TED effect, causing the characteristics of SEGMOSFETs is degraded severely.