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Microsystem Technologies
Published in: Microsystem Technologies 9-11/2008

01-10-2008 | Technical Paper

Enhancement of the adhesive force of metal films on PTFE surface achieved by fast-atom-beam surface modification

Authors: Yuichi Utsumi, Takefumi Kishimoto

Published in: Microsystem Technologies | Issue 9-11/2008

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Abstract

We tried the method to increase the peel strength between thin film metals and various substrate materials using saddle field fast atom beam (FAB) sources. It is notable that the peel strength was increased more than several times for all substrates than those who were not modified by surface activation using FAB irradiation. Highest peel strength was observed at the coupling of Si and metals in both case of Ar irradiation and SF6 reactive etching by FAB. This surface activation technique was applied to the fabrication of microelectrodes for the detection of mouse nerve signals. The process is expected as one of the available techniques for pre-treatment of the film deposition for several electrical devices.
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Literature
Takagi H, Kikuchi K, Maeda R, Chung TR, Suga T (1996) Surface activated bonding of silicon wafers at room temperature. Appl Phys Lett 68(16):2222CrossRef
Takagi H, Maeda R, Hosoda N, Suga T (1999) Room-temperature bonding of lithium and silicon wafers by argon-beam surface activation. Appl Phys Lett 74(16):2387CrossRef
Toma Y, Hatakeyama M, Ichiki K, Huang H, Yamauchi K, Watanabe K, Kato T (1997) Fast atom beam etching of glass materials with contact and non-contact masks. Jpn J Appl Phys 36(12B):765
Utsumi Y, Kishimoto T, Hattori T, Hara H (2005) Large area x-ray lithography system for LIGA process operating in wide energy range of synchrotron radiation. Jpn J Appl Phys 44(7B):5500CrossRef
Metadata
Title
Enhancement of the adhesive force of metal films on PTFE surface achieved by fast-atom-beam surface modification
Authors
Yuichi Utsumi
Takefumi Kishimoto
Publication date
01-10-2008
Publisher
Springer-Verlag
Published in
Microsystem Technologies / Issue 9-11/2008
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-008-0592-5

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