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Published in: Microsystem Technologies 3/2022

11-09-2018 | Technical Paper

Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness

Authors: Jayanti Paul, Chandrima Mondal, Abhijit Biswas

Published in: Microsystem Technologies | Issue 3/2022

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Abstract

We investigate the effects of thickness as well as dielectric constant of buried oxide on the digital performance of 30 nm germanium-on-insulator (GeOI) MOSFETs employing extensive TCAD simulation. Furthermore the role of Ge channel thickness on various device metrics is studied. For a GeOI pMOSFET having 10-nm thick channel we obtain the lowest value of subthreshold slope, OFF-current, and the highest value of threshold voltage and ON-to-OFF current ratio using 20-nm thick Air as the BOX insulator whereas the lowest intrinsic delay of 5.79 ns is obtained using HfO2 BOX thickness of 200 nm. Moreover, subthreshold slope and OFF-current can further be reduced concurrently improving threshold voltage and ON-to-OFF current ratio by thinning down the channel at the cost of increase in intrinsic delay.

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Metadata
Title
Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness
Authors
Jayanti Paul
Chandrima Mondal
Abhijit Biswas
Publication date
11-09-2018
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 3/2022
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-4113-x

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