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Microsystem Technologies
Erschienen in: Microsystem Technologies 3/2022

11.09.2018 | Technical Paper

Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness

verfasst von: Jayanti Paul, Chandrima Mondal, Abhijit Biswas

Erschienen in: Microsystem Technologies | Ausgabe 3/2022

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Abstract

We investigate the effects of thickness as well as dielectric constant of buried oxide on the digital performance of 30 nm germanium-on-insulator (GeOI) MOSFETs employing extensive TCAD simulation. Furthermore the role of Ge channel thickness on various device metrics is studied. For a GeOI pMOSFET having 10-nm thick channel we obtain the lowest value of subthreshold slope, OFF-current, and the highest value of threshold voltage and ON-to-OFF current ratio using 20-nm thick Air as the BOX insulator whereas the lowest intrinsic delay of 5.79 ns is obtained using HfO2 BOX thickness of 200 nm. Moreover, subthreshold slope and OFF-current can further be reduced concurrently improving threshold voltage and ON-to-OFF current ratio by thinning down the channel at the cost of increase in intrinsic delay.
Vorheriger Artikel High performance GaN/InGaN multiple quantum well LEDs through electron blocking layer engineering
Nächster Artikel Effects of sidewall spacer layers on thermal and low frequency noise performance of SOI UTB MOSFETs

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Metadaten
Titel
Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness
verfasst von
Jayanti Paul
Chandrima Mondal
Abhijit Biswas
Publikationsdatum
11.09.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 3/2022
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-4113-x

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