1 Introduction
2 Experimental Procedure
2.1 Materials
2.2 Plasma Deposition Reactor
Sample | Deposition power, W | Time of pre-treatment, min | deposition time, min | Gas for pretreatment at 100 W and 1000 mTorr | Carrier gas for deposition |
---|---|---|---|---|---|
Blank (bare substrate) | … | … | … | … | … |
Pre-activated sample with oxygen plasma before deposition | 100 | 3 | … | Oxygen | Oxygen |
Deposited samples without pre-activation with O2 plasma (A) | 100 | … | 5 | … | Oxygen |
Deposited samples without pre-activation with O2 plasma (B) | 200 | … | 5 | … | Oxygen |
Deposited samples after activation with O2 plasma (C) | 100 | 3 | 5 | Oxygen | Oxygen |
Deposited samples after activation with O2 plasma (D) | 200 | 3 | 5 | Oxygen | Oxygen |
2.3 Characterization Techniques
3 Results and Discussion
3.1 FT-IR Analysis
Vibrational assignment | wave numbers cm−1 | standard precursor, HMDSO | Sample A | Sample B | Sample C | Sample D |
---|---|---|---|---|---|---|
Inorganic groups | ||||||
Si-OH groups | 3300-3400 | n.d | 3312 | 3395 | 3329 | n.d |
Silanol groups Si-OH stretching | 900-920 | n.d | 933 | 919 | 925 | n.d |
Si-O-Si asymmetric stretching vibration mode | 1000-1150 | 1072 | 1040-1134 | 1044 | 1059 | 1026 |
Si-O-Si bending vibration mode | 800 | 849 | 802 | 817 | 797 | 804 |
Si-O-Si Rocking mode | 450 | 450 | 422 | 416 | n.d | 454 |
Organic groups | ||||||
C-H asymmetric stretching | 2900-2960 | 2922-2961 | 2922 | n.d | 2917 | n.d |
Si-CH3wagging (symmetric bending of methyl groups bonded to Si) | 1260 | 1259 | 1278 | n.d | n.d | n.d |
rocking of CH3 in Si-((CH3)3 | 850 | 849 | n.d | n.d | n.d | n.d |
3.2 SEM and EDX Analyses
3.3 Contact Angle Measurements
Sample | ΔE | Rough, Rms, nm | Ave Rough, Ra, nm | Contact angle, θ, deg | Coating thickness, nm | protective efficiency % |
---|---|---|---|---|---|---|
Blank (bare substrate) | 11.52 | 35.79 | 30,39 | 72 | … | … |
Pre-activated coupon with oxygen plasma before deposition | … | 34.37 | 26.55 | … | … | … |
Coupons without pre-activation and deposited with oxygen plasma | ||||||
A | 5.22 | 58,14 | 46,98 | 75 | … | 55.29% |
B | 4.46 | 33.59 | 26.50 | 83 | 939.53 | 92.93 |
Coupons with pre-activation and deposited with oxygen plasma | ||||||
C | 4.64 | 75,60 | 58,67 | 79 | … | 78.72 |
D | 3.25 | 47,59 | 35,36 | 105 | 955.27 | 93.38 |
3.4 AFM Analyses
Sample | Reference sample | Sample after aging | ΔE | ||||
---|---|---|---|---|---|---|---|
L* | a* | b* | L* | a* | b* | ||
A | 38.24 | 0.09 | 1.27 | 45.83 | 3.89 | 20.90 | 10.21 |
36.74 | 3.59 | 1.97 | 45.83 | 1.50 | 10.45 | ||
B | 49.08 | 0.21 | 4.01 | 43.56 | 0.70 | 5.14 | 6.22 |
33.90 | 6.26 | 10.20 | 42.09 | 0.86 | 0.81 | ||
C | 48.77 | 2.5 | 7.56 | 48.14 | 3.1 | 4.46 | 3.97 |
41.73 | 1.95 | 5.28 | 41.73 | 2.3 | 2.13 | ||
D | 56.28 | 0.87 | 5.43 | 54.04 | 0.55 | 8.95 | 1.65 |
53.19 | 1.91 | 12.52 | 55.58 | 0.36 | 11.71 |
3.5 EIS Measurments
Symbol | Symbol abbreviation | Element |
---|---|---|
(Rp) | Polarization resistance* of the corrosion process on the metal/alloy substrate | |
(Rs) | Solution resistance** (electrolyte) corresponding to the resistance of the electrolyte | |
CPE | Constant Phase Element (shows the inhomogeneous character of the system, frequently considered as electrode roughness and related to the capacitance (Q) | |
… | Parallel join connection |
Samples | Rs* Ω | CPE | Rp kΩ | chi- square values | (IE)% | θ | |
---|---|---|---|---|---|---|---|
Y0, µMh0 | n1 | ||||||
Blank | 27.2 | 414 | 0.72 | 5.32 | 0.29815 | … | … |
A | 5.77 | 2.12 | 0.849 | 11.9 | 0.0214 | 55.29 | 0.5529 |
B | 37.0 | 381 | 0.545 | 75.3 | 0.12034 | 92.93 | 0.9293 |
C | 48.8 | 248 | 0.428 | 25.0 | 0.61333 | 78.72 | 0.7872 |
D | 32.2 | 220 | 0.575 | 80.4 | 0.019268 | 93.38 | 0.9338 |
4 Conclusion
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The gaseous precursor partially dissociates in the presence of plasma, the radicals adhere to the surface of metal and/or alloy subjected to plasma, and build amorphous SiOx layers that are highly effective at preventing corrosion. The concentrations of these components in the deposited film varied considerably depending on the experimental conditions.
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In this work, depositing the siloxane onto silver, pre-treated in plasma according to the variables outlined in the methodology as variations in the plasma process parameters have a significant impact on the corrosion protection capabilities of the SiOx thin films that are formed on silver copper alloy substrates.
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The input power has an impact on the characteristics of the PECVD film in addition to oxygen plasma pretreatment. An increase in the discharge input power results in the formation of more inorganic films in the SiOx film's adhesion, an increase in the degree of surface contamination, and a noticeable improvement in the network cross-linking. It also causes a marked increase in the protective effect of the coatings.
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As FTIR and SEM proved, increasing the discharge input power variable during deposition reduced the carbon content of the film and increased its inorganic nature.
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The fabricated coats improved protective properties, as assessed by EIS and by tarnishing test of the coated silver by sulfur dioxide. From the EIS results, it was found that the deposited film improved the protective efficiencies from 55.29 to 92.93%, respectively. The performance is enhanced after the oxygen plasma pretreatment step, and the input power is increased compared to untreated samples.
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The SiOx film's ability to act as a barrier against the aggressive environment as well as its high conformability to the surface, even when it is already covered in a thin layer of corrosion products, can be linked to the increase in the impedance modulus' (|Z|) value.
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The SiOx film evens out the patina's voids, preventing corrosive species from penetrating through the corrosion layer to the metal's surface.
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Another important consideration for meeting the demands of curators working on the conservation of prehistoric silver artifacts with very intricate embellishments is the high degree of tolerance to any surface roughness.