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Published in: Journal of Materials Science: Materials in Electronics 9/2021

10-04-2021

Fabrication of high-conductivity RGO film at a temperature lower than 1500 ºC by electrical current

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2021

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Abstract

Fabricating conductive graphene films by assembling graphene oxide (GO) sheets is highly desired for many applications, however a very high temperature around 3000 K is usually required to repair the sp2 structure for traditional thermal annealing. Here, an electric field assisted Joule heating method was developed to repair the sp2 structure in GO at a temperature lower than 1500 ºC. The resulting free-standing graphene film shows a high electrical conductivity (~ 1840 S/cm) and high C/O ratio (132), both of which are much higher than those of thermally reduced GO films under the same temperature. These findings provide new possibilities for fabricating high-quality graphene films in an energy-efficient and low-cost manner.

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Appendix
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Metadata
Title
Fabrication of high-conductivity RGO film at a temperature lower than 1500 ºC by electrical current
Publication date
10-04-2021
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05797-7

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