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Published in: Journal of Materials Science: Materials in Electronics 9/2021

19-04-2021

Facile preparation of Cu foam/Sn composite preforms for low-temperature interconnection of high-power devices

Authors: Jiaxin Liu, Qing Wang, Jinglong Liu, Yun Mou, Yang Peng, Mingxiang Chen

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2021

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Abstract

A simple and low-cost Cu foam/Sn composite preform was proposed for the low-temperature interconnection of high-power devices. The composite preform was prepared by pressing a Cu foam as the skeleton between two Sn foils as low-melting point metals with different pressures. The composite preform retains the high re-melting temperature superiority of transient liquid phase (TLP) bonding, as well as shortens the reflow time of intermetallic compounds (IMCs). The microstructures of the bondlines and the electrical and mechanical properties of the composite preform pressed at different pressures were studied. After sintering at 260 °C, the interconnection layer becomes denser with the increasing pressures of composite preform, and the bondline is composed of mainly Cu6Sn5, Cu3Sn and Ag3Sn phase. When the pressure of the composite preform increases from 200 to 400 MPa, the electrical resistivity decreases and the shear strength of bonded joints increases. At the pressure of 400 MPa, the electrical resistivity and the shear strength are 8.83 μΩ cm and 36.4 MPa, respectively, which are far better than the traditional Sn performs. Furthermore, two fracture failure models were obtained to analyze the breaking mechanism of the bonding joints under different sintering temperatures.

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Metadata
Title
Facile preparation of Cu foam/Sn composite preforms for low-temperature interconnection of high-power devices
Authors
Jiaxin Liu
Qing Wang
Jinglong Liu
Yun Mou
Yang Peng
Mingxiang Chen
Publication date
19-04-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05890-x

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