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Published in: Journal of Electronic Testing 6/2016

11-11-2016

Four-Port Network Parameters Extraction Method for Partially Depleted SOI with Body-Contact Structure

Authors: Jun Liu, Yu Ping Huang, Kai Lu

Published in: Journal of Electronic Testing | Issue 6/2016

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Abstract

This work presents a model parameter extraction method based on four-port network for RF SOI MOSFET modeling. The gate, drain, source and body terminals are served as four separate ports. Four-port measurement simplifies the determination of small-signal equivalent circuit model elements such as parameters related to the body terminal which become clear in the equivalent circuit analysis. The extraction method of the RF SOI MOSFET extrinsic parasitic elements was also presented. The accuracy of the model extraction was verified by measurement and simulation from 100 MHz to 20 GHz.

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Literature
1.
go back to reference Brinkhoff J, Rustagi SC, Shi J, Lin F (2007) MOSFET model extraction using 50 GHz four-port measurements. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 647–650 Brinkhoff J, Rustagi SC, Shi J, Lin F (2007) MOSFET model extraction using 50 GHz four-port measurements. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 647–650
2.
go back to reference Han J, Je M, Shin H (2002) A simple and accurate method for extracting substrate resistance of RF MOSFETs. IEEE Electron Device Lett 23(7):434–436 Han J, Je M, Shin H (2002) A simple and accurate method for extracting substrate resistance of RF MOSFETs. IEEE Electron Device Lett 23(7):434–436
3.
go back to reference Jen HM, Enz CC, Pehlke DR, Schroter M (1999) Accurate modeling and parameter extraction for mos transistors valid up to 10 GHz. IEEE Trans Electron Devices 46(11):2217–2227 Jen HM, Enz CC, Pehlke DR, Schroter M (1999) Accurate modeling and parameter extraction for mos transistors valid up to 10 GHz. IEEE Trans Electron Devices 46(11):2217–2227
4.
go back to reference Koolen MCAM, Geelen, JAM, Versleijen MPJG (1991) An improved DC-embedding technique for on-wafer high-frequency characterization. In: Proc. Bipolar circuits and technology meeting, pp 188–191 Koolen MCAM, Geelen, JAM, Versleijen MPJG (1991) An improved DC-embedding technique for on-wafer high-frequency characterization. In: Proc. Bipolar circuits and technology meeting, pp 188–191
5.
go back to reference Lee S (2005) Accurate rf extraction method for resistances and inductances of sub-0.1 μm CMOS transistors. Electron Lett 41(24):1325–1327 Lee S (2005) Accurate rf extraction method for resistances and inductances of sub-0.1 μm CMOS transistors. Electron Lett 41(24):1325–1327
6.
go back to reference Lee BJ, Kim K, Yu CG et al (2005) Effects of gate structures on the RF performance in PD SOI MOSFETs. IEEE Microwave Wireless Compon Lett 15(4):223–225 Lee BJ, Kim K, Yu CG et al (2005) Effects of gate structures on the RF performance in PD SOI MOSFETs. IEEE Microwave Wireless Compon Lett 15(4):223–225
7.
go back to reference Wu SD, Huang GW, Chen KM, Chang CY, Tseng HC, Hsu TL (2005) Extraction of substrate parameters for rf mosfets based on four-port measurement. IEEE Microwave Wireless Compon Lett 15(6):437–439CrossRef Wu SD, Huang GW, Chen KM, Chang CY, Tseng HC, Hsu TL (2005) Extraction of substrate parameters for rf mosfets based on four-port measurement. IEEE Microwave Wireless Compon Lett 15(6):437–439CrossRef
8.
go back to reference Wu SD, Huang GW, Cheng LP, Wen SY, Chang CY (2003) Characterization of 2-port configuration MOSFETs amplifiers by 4-port measurement. In: Proc. Asia-Pacific Microwave Conf, vol. 3, pp 1431–1433 Wu SD, Huang GW, Cheng LP, Wen SY, Chang CY (2003) Characterization of 2-port configuration MOSFETs amplifiers by 4-port measurement. In: Proc. Asia-Pacific Microwave Conf, vol. 3, pp 1431–1433
9.
go back to reference Yang MT, Ho PPC, Wang YJ, Yeh TJ, Chia YT (2003) Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 369–372 Yang MT, Ho PPC, Wang YJ, Yeh TJ, Chia YT (2003) Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz. In: Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 369–372
Metadata
Title
Four-Port Network Parameters Extraction Method for Partially Depleted SOI with Body-Contact Structure
Authors
Jun Liu
Yu Ping Huang
Kai Lu
Publication date
11-11-2016
Publisher
Springer US
Published in
Journal of Electronic Testing / Issue 6/2016
Print ISSN: 0923-8174
Electronic ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-016-5625-x

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