Issue 11/2001
Content (22 Articles)
Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth
R. Zhang, I. Bhat
In-situ monitoring of the growth of Bi2 Te2 and Sb2 Te3 films and Bi2 Te3-Sb2 Te3 superlattice using spectroscopic ellipsometry
Hao Cui, Ishwara Bhat, Brooks O'Quinn, Rama Venkatasubramanian
OMVPE growth of P-type GaN using solution Cp2Mg
Yundong Qi, Charles Musante, Kei May Lau, Lesley Smith, Rajesh Odedra, Ravi Kanjolia
Alternative boron precursors for BGaAs epitaxy
J. F. Geisz, D. J. Friedman, Sarah Kurtz, R. C. Reedy, G. Barber
Effect of substrate orientation on phase separation in epitaxial GaInAsSb
C. A. Wang, D. R. Calawa, C. J. Vineis
On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen
H. Hardtdegen, r. Schmidt, K. Wirtz, A. Mueck, S. Guadagnuolo, G. Vergani
In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry
Yoshitaka Taniyasu, Akihiko Yoshikawa
Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor
A. J. Blattner, J. Lensch, B. W. Wessels
In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE
O. J. Pitts, S. P. Watkins, C. X. Wang, J. A. H. Stotz, M. L. W. Thewalt
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
E. D. Bourret-Courchesne, K. M. Yu, M. Benamara, Z. Liliental-Weber, J. Washburn
Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties
A. Knauer, H. Wenzel, G. Erbert, B. Sumpf, M. Weyers
In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K
T. Hannappel, L. Töben, K. Möller, F. Willig
P-type carbon doping of GaSb
R. Wiersma, J. A. H. Stotz, O. J. Pitts, C. X. Wang, M. L. W. Thewalt, S. P. Watkins
Purification of dialkylzinc precursors using tertiary amine ligands
L. M. Smith, K. M. Coward, A. C. Jones, J. F. Bickley, A. Steiner, S. Petroni, J. S. Roberts
Impurities in hydride gases part 1: Investigation of trace moisture in the liquid and vapor phase of ultra-pure ammonia by FTIR spectroscopy
Hans H. Funke, Mark W. Raynor, Belgin Yücelen, Virginia H. Houlding
Cement-based controlled electrical resistivity materials
Sihai Wen, D. D. L. Chung
Interdiffusion analysis of the soldering reactions in Sn-3.5Ag/Cu couples
K. S. Bae, S. J. Kim
Low-temperature air-fireable glass-free metallic thick-film electrical conductor materials
Zongrong Liu, D. D. L. Chung
The influence of high-temperature annealing on SiC schottky diode characteristics
Q. Zhang, T. S. Sudarshan
Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding
N. Quitoriano, W. S. Wong, L. Tsakalakos, Y. Cho, T. Sands
Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Re
D. Söderström, S. Lourdudoss, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann