Skip to main content
Top

Journal of Electronic Materials

Issue 3/2011

Content (16 Articles)

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi-Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi

Point Defects in CdZnTe Crystals Grown by Different Techniques

R. Gul, A. Bolotnikov, H. K. Kim, R. Rodriguez, K. Keeter, Z. Li, G. Gu, R. B. James

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

L. O. Bubulac, J.D. Benson, R.N. Jacobs, A.J. Stoltz, M. Jaime-Vasquez, L. A. Almeida, A. Wang, L. Wang, R. Hellmer, T. Golding, J.H. Dinan, M. Carmody, P.S. Wijewarnasuriya, M.F. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.F. Lofgreen, D. Rhiger

Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs

Y. C. Lin, Sheng-Li Shie, Tin-En Shie, Yuen-Yee Wong, K. S. Chen, E. Y. Chang

Electrical Conductivity of Parylene F at High Temperature

S. Diaham, M. Bechara, M.-L. Locatelli, C. Tenailleau

Preparation of Bi0.85Nd0.15FeO3 Nanotube Arrays by a Sol–Gel Template Method

Dongyun Guo, Yiping Gong, Changyong Liu, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Creep Properties of Sn-1.0Ag-0.5Cu Lead-Free Solder with Ni Addition

F. X. Che, W. H. Zhu, Edith S. W. Poh, X. R. Zhang, Xiaowu Zhang, T. C. Chai, S. Gao

Dielectric Properties and Microstructure of MgO-TiO2-ZnO-CaO Ceramics

Yonggang Zhang, Shunhua Wu, Jinxu Liu, Shunqi Gao