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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 11/2017

20-03-2017

Near-infrared quantum cutting and energy transfer mechanism in Lu2O3: Tm3+/Yb3+ phosphor for high-efficiency photovoltaics

Authors: Wen Liu, Jiahua Zhang, Zhendong Hao, Guotao Xiang, LiangLiang Zhang, Xia Zhang, Guohui Pan, Yongshi Luo, Haifeng Zhao, Huajun Wu

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2017

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Abstract

Near-infrared downconversion phenomenon has been demonstrated in Lu2O3: Tm3+/Yb3+ phosphor upon direct excitation of Tm3+:1G4 level at 463 nm. The efficient energy transfer from Tm3+: 1G4 → Yb: 2F5/2 has been elucidated by the excitation spectra, the visible and NIR spectra as well as the decay curves of Tm: 1G4 state. The mechanism of downconversion in Lu2O3:Tm3+/Yb3+ has been discussed in detail. According to analysis of the dependence of the initial transfer rate over Yb3+ ion concentration, it could be included that energy transfer (ET) from Tm3+ to Yb3+ is a single-step ET process instead of a cooperative one. By varying the Yb3+ concentrations, we obtain the Lu2O3: 0.2%Tm3+/30%Yb3+ sample with theoretical quantum efficiency as high as 148.2%. Because the excited state of Yb3+ just above the band edge of crystalline silicon, it suggested that Lu2O3: Tm3+/Yb3+ sample will be beneficial to improve the conversion efficiency of c-Si solar cells.
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Metadata
Title
Near-infrared quantum cutting and energy transfer mechanism in Lu2O3: Tm3+/Yb3+ phosphor for high-efficiency photovoltaics
Authors
Wen Liu
Jiahua Zhang
Zhendong Hao
Guotao Xiang
LiangLiang Zhang
Xia Zhang
Guohui Pan
Yongshi Luo
Haifeng Zhao
Huajun Wu
Publication date
20-03-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6506-5

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