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Published in:
Electronic Properties of Dilute Bismides Read chapter Read first chapter

2019 | OriginalPaper | Chapter

5. Phosphorus and Nitrogen Containing Dilute Bismides

Authors : Shumin Wang, Tingting Jin, Shuyan Zhao, Dan Liang, Pengfei Lu

Published in: Bismuth-Containing Alloys and Nanostructures

Publisher: Springer Singapore

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Abstract

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.

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previous chapter Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures
next chapter GaSbBi Alloys and Heterostructures: Fabrication and Properties
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Metadata
Title
Phosphorus and Nitrogen Containing Dilute Bismides
Authors
Shumin Wang
Tingting Jin
Shuyan Zhao
Dan Liang
Pengfei Lu
Copyright Year
2019
Publisher
Springer Singapore
Book
Bismuth-Containing Alloys and Nanostructures

Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-8078-5_5