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Erschienen in:
Electronic Properties of Dilute Bismides Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

5. Phosphorus and Nitrogen Containing Dilute Bismides

verfasst von : Shumin Wang, Tingting Jin, Shuyan Zhao, Dan Liang, Pengfei Lu

Erschienen in: Bismuth-Containing Alloys and Nanostructures

Verlag: Springer Singapore

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Abstract

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.

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Vorheriges Kapitel Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures
Nächstes Kapitel GaSbBi Alloys and Heterostructures: Fabrication and Properties
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Metadaten
Titel
Phosphorus and Nitrogen Containing Dilute Bismides
verfasst von
Shumin Wang
Tingting Jin
Shuyan Zhao
Dan Liang
Pengfei Lu
Copyright-Jahr
2019
Verlag
Springer Singapore
Buch
Bismuth-Containing Alloys and Nanostructures

Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-981-13-8078-5_5

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