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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2012

01-04-2012

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Authors: A. A. Patil, P. P. Hankare, A. B. Gaikawad, K. M. Garadkar

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2012

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Abstract

Preparation of layered type semiconductor Mo0.5W0.5S2 − thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS2 and WS2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10−3–10−2 (Ώ cm)−1.
previous article Leakage current suppression in solution-deposited barium titanate films on copper foils
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Metadata
Title
Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film
Authors
A. A. Patil
P. P. Hankare
A. B. Gaikawad
K. M. Garadkar
Publication date
01-04-2012
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2012
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-011-0519-2

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