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Journal of Materials Engineering and Performance
Published in: Journal of Materials Engineering and Performance 1/2019

06-12-2018

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Authors: Ruixiang Hou, Lei Li, Xin Fang, Hui Zhao, Yihang Chen, Ziang Xie, Guosheng Sun, Xinhe Zhang, Yanfei Zhao, Rong Huang, Zengli Huang, Youqin He, Nongnong Ma, Jicai Zhang, Wanjing Xu, Jinbo Yang, Chijie Xiao, G. G. Qin

Published in: Journal of Materials Engineering and Performance | Issue 1/2019

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Abstract

Very recently, we reported a novel doping method called plasma doping without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT doping of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shallow depths of tens of nanometer and very high surface concentrations, approaching or exceeding 1E20/cm3, by using PDWOEB is reported. It has been found for the first time that the doping depths and surface concentrations of these impurities doped into SiC by the PDWOEB increase drastically with increasing doping time and the ferromagnetism of SiC due to Ni doping is demonstrated. Moreover, the approximate diffusivities of B, Mg, Ni, Cu, Mn, Cr and Fe in SiC at RT under plasma stimulation are obtained. The physical mechanism of PDWOEB is further discussed, and some unclear viewpoints are clarified.
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Metadata
Title
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion
Authors
Ruixiang Hou
Lei Li
Xin Fang
Hui Zhao
Yihang Chen
Ziang Xie
Guosheng Sun
Xinhe Zhang
Yanfei Zhao
Rong Huang
Zengli Huang
Youqin He
Nongnong Ma
Jicai Zhang
Wanjing Xu
Jinbo Yang
Chijie Xiao
G. G. Qin
Publication date
06-12-2018
Publisher
Springer US
Published in
Journal of Materials Engineering and Performance / Issue 1/2019
Print ISSN: 1059-9495
Electronic ISSN: 1544-1024
DOI
https://doi.org/10.1007/s11665-018-3782-z

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