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Microsystem Technologies

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22-10-2018 | Technical Paper

Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution

Authors: Shankar Dutta, Nidhi Gupta, Isha Yadav, Ramjay Pal, K. K. Jain, Dilip K. Bhattacharya, Ratnamala Chatterjee

Published in: Microsystem Technologies | Issue 8/2019

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Abstract

This paper discusses about the fabrication of comb-structure with vertical sidewall profile by wet chemical etching of Si (110) substrate in boiling KOH solution. Etch rate of the Si (110) substrate in boiling KOH solution is 9 times higher with a 40X reduction of average surface roughness than the etch rate at 75 °C. An etch selectivity of 48:1 for the (110) over (111) plane is observed in the boiling KOH solution (35 wt%). A rhombus shaped comb-finger mask is used to fabricate the comb-structure. Each comb finger has the dimension of length: 500 µm and width: 8 µm with inter-comb spacing of 5 µm. Finally, suspended comb-type MEMS structure is realized by using the dissolved wafer process technique.

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Title: Fabrication of comb structure with vertical sidewalls in Si (110) substrate by wet etching in boiling KOH solution
Authors: Shankar Dutta
Nidhi Gupta
Isha Yadav
Ramjay Pal
K. K. Jain
Dilip K. Bhattacharya
Ratnamala Chatterjee
Publication date: 22-10-2018
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 8/2019
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-018-4195-5

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