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Journal of Sol-Gel Science and Technology
Published in: Journal of Sol-Gel Science and Technology 3/2014

01-09-2014 | Original Paper

High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution

Authors: Juan Peng, Chenhang Sheng, Jifeng Shi, Xifeng Li, Jianhua Zhang

Published in: Journal of Sol-Gel Science and Technology | Issue 3/2014

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Abstract

In this paper, high-k titanium–aluminum oxide (ATO) dielectric film has been realized by using organic–inorganic hybrid precursor solution. X-ray diffraction pattern revealed that the ATO films (Ti content less than 67 at%) remain amorphous phase for annealing treatment at 400 °C. And all of the amorphous ATO films had very smooth and uniform surface with root mean square (RMS) roughness of less than 0.5 nm. Meanwhile, the results showed that the ATO film (Ti:Al = 1:8) had the best performance, including RMS roughness of 0.33 nm, relative permittivity of 15, and leakage current density of 1.41 × 10−6 A/cm2 at 1 MV/cm.
previous article Synthesis and characterization of some acetoxime-modified hetero-metal alkoxide precursors of zinc(II) and aluminum(III) for sol–gel transformation to nano-sized ZnAl2O4
next article The oxygen sensitive properties of (LaBa)Co2O5+δ thin films fabricated by polymer-assisted deposition technique

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Metadata
Title
High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution
Authors
Juan Peng
Chenhang Sheng
Jifeng Shi
Xifeng Li
Jianhua Zhang
Publication date
01-09-2014
Publisher
Springer US
Published in
Journal of Sol-Gel Science and Technology / Issue 3/2014
Print ISSN: 0928-0707
Electronic ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-014-3400-y

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