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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 7/2015

01-07-2015

Laser operation by photovoltaic features of kesterite Cu2ZnSnSexS4−x crystalline films

Authors: K. Plucinski, A. M. El-Naggar, A. A. Albassam, A. O. Fedorchuk, N. S. AlZayed, A. Krymus, I. V. Kityk, G. Myronchuk

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

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Abstract

We have found an enhancement of the photovoltaic efficiency from the Cu2ZnSnSexS4−x films by illumination by the two coherent beams of 1320 nm 15 ns pulsed Nd:YAG laser. The observed changes did not exceed 10 % and were reversible. Following the performed quantum chemical simulations it was established that the origin of the effect is caused by photopolarization of the intrinsic defect trapping levels within the energy gap and photoinduced phonons. The contribution of the harmonic and anharmonic phonons was evaluated. The optimization of the photovoltaic efficiency was achieved due to the varying of Se/S ration. Additionally the pumping of the trapping intrinsic defect levels was done.
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Metadata
Title
Laser operation by photovoltaic features of kesterite Cu2ZnSnSexS4−x crystalline films
Authors
K. Plucinski
A. M. El-Naggar
A. A. Albassam
A. O. Fedorchuk
N. S. AlZayed
A. Krymus
I. V. Kityk
G. Myronchuk
Publication date
01-07-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3061-9

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