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Journal of Electronic Materials
Published in: Journal of Electronic Materials 1/2023

27-10-2022 | Original Research Article

Mechanism of Aluminum Droplet Nucleation and Ripening on GaAs(001) Surface by Molecular Beam Epitaxy

Authors: Yi Wang, Chong Jiang, Yanbin Huang, Zhao Ding, Zijiang Luo, Jihong Wang, Xiang Guo

Published in: Journal of Electronic Materials | Issue 1/2023

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Abstract

A study is conducted on the nucleation process of aluminum droplets on a GaAs(001) surface during droplet epitaxial growth, which reveals the influencing factors in the nucleation process, including the substrate temperature and the deposition rate, when other conditions are unchanged. In addition, the minimum atomic number for the initially incomplete state, the initially completed state and the completed state are calculated to be 1, 2 and 5, respectively. In the meantime, based on the extended thermodynamic model, the energy \(\left( {E_{r} } \right)\) and ideal contact angle \(\left( {\theta_{0} } \right)\) in the process of droplet ripening and nucleation are 2.5 eV and 73.5°.
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Metadata
Title
Mechanism of Aluminum Droplet Nucleation and Ripening on GaAs(001) Surface by Molecular Beam Epitaxy
Authors
Yi Wang
Chong Jiang
Yanbin Huang
Zhao Ding
Zijiang Luo
Jihong Wang
Xiang Guo
Publication date
27-10-2022
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 1/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-022-10012-2

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