Analog Performance Analysis of High-K Spacer Dual Material Gate Graded Channel Nanotube

A dual-metal gate with a high-k spacer and a graded channel nanotube is proposed and analyzed. It is a promising architecture to combat the prominent lateral band-to-band tunneling (L-BTBT)-based gate-induced drain leakage (GIDL) experienced in gate-all-around structures, and has a superior analog performance. A comparative analysis of dual metal gate (DMG) and single metal gate (SMG) structures shows the higher efficacy of the DMG and high-k spacer structures. The proposed device structure offers peaks for g_m, f_T, g_d, and I_DS at 0.065 mS, 980 GHz, 0.11 mS/μm, and 10⁻³ A, respectively, making them a good choice for analog applications in the terahertz range. The work function tuning of the dual gate is demonstrated, and the use of graded channel and high-k spacers makes the proposed device a reliable candidate for scaling and applications, while being cost-effective and in sync with existing fabrication processes. This work illustrates the benefits of DMG with a high-k spacer over SMG and DMG structures without high-k spacer counterparts. It provides an incentive for further experimental exploration.