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Journal of Materials Science: Materials in Electronics

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19-10-2020

Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode

Authors: S. Duman, K. Ejderha, I. Orak, N. Yıldırım, A. Turut

Published in: Journal of Materials Science: Materials in Electronics | Issue 23/2020

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Abstract

The conductance measurements of the non-annealed (D1) and 400 °C annealed (D2) Ni/n-GaP/Al diodes were made over a wide frequency range of (10 kHz to 5 MHz) and temperature of (100–320 K with steps of 20 K) with bias voltage as a parameter. The capacitance and conductance measurement method is one of the most popular non-destructive methods to obtain information about metal–semiconductor (MS) diode interfaces. The interface state density distribution curves were determined over the band-gap energy near the semiconductor energy midgap. The interface state density (D_it) has been seen to be of the order of ∼10¹² eV⁻¹ cm⁻². The D_it∼T curves have been plotted for different values of bias voltage. The value of D_it increased with increasing measurement temperature, and with increasing voltage from negative bias to positive bias voltage for both diodes. It was seen that the D_it value for D2 diode was greater than that for the D1 diode at each measurement temperature and bias voltage. It was seen in the interface state energy distribution or density distribution curves that the value of D_it has increased from the valence band maximum (E_v) towards conduction band minimum (E_c) at each measurement temperature.

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Title: Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode
Authors: S. Duman
K. Ejderha
I. Orak
N. Yıldırım
A. Turut
Publication date: 19-10-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 23/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-04638-3

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