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Published in: Journal of Materials Science: Materials in Electronics 1/2012

01-01-2012

The morphology and kinetic evolution of intermetallic compounds at Sn–Ag–Cu solder/Cu and Sn–Ag–Cu-0.5Al2O3 composite solder/Cu interface during soldering reaction

Authors: S. Y. Chang, L. C. Tsao, M. W. Wu, C. W. Chen

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2012

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Abstract

In this work, Sn3.0Ag0.7Cu (SAC) composite solders were produced by mechanically intermixing 0.5 wt% Al2O3 nanoparticles into Sn3.0Ag0.7Cu solder. The formation and growth kinetics of the intermetallic compounds (IMC) formed during the liquid–solid reactions between SAC-0.5Al2O3 composite solder and Cu substrates at various temperatures ranging from 250 to 325 °C were investigated, and the results were compared to the SAC/Cu system. Scanning electron microscopy (SEM) was used to quantify the interfacial microstructure for each processing condition. The thickness of interfacial intermetallic layers was quantitatively evaluated from SEM micrographs using imaging software. Experimental results showed that IMC could be dramatically affected by a small amount of intermixing 0.5 wt% Al2O3 nanoparticles into Sn3.0Ag0.7Cu solder. A continuous elongated scallop-shaped overall IMC layer was found at SAC/Cu interfaces. However, after the addition of Al2O3 nanoparticles, a discontinuous rounded scallop-shaped overall IMC layer appeared at SAC-0.5Al2O3/Cu interfaces. Kinetics analyses showed that growth of the overall IMC layer in SAC/Cu and SAC-0.5Al2O3/Cu soldering was diffusion controlled. The activation energies calculated for the overall IMC layer were 44.2 kJ/mol of SAC/Cu and 59.3 kJ/mol for SAC-0.5Al2O3/Cu soldering, respectively. This indicates that the presence of a small amount of Al2O3 nanoparticles is effective in suppressing the growth of the overall IMC layer.

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Literature
1.
go back to reference M. Abtew, G. Selvaduray, Mater. Sci. Eng. A27, 95–141 (2000) M. Abtew, G. Selvaduray, Mater. Sci. Eng. A27, 95–141 (2000)
4.
go back to reference J. Glazer, Inter. Mater. Rev. 40, 65–93 (1995) J. Glazer, Inter. Mater. Rev. 40, 65–93 (1995)
8.
go back to reference L.C. Tsao, S.Y. Chang, C.I. Lee, W.H. Sun, C.H. Huang, Mater. Des. 31, 4831–4835 (2010)CrossRef L.C. Tsao, S.Y. Chang, C.I. Lee, W.H. Sun, C.H. Huang, Mater. Des. 31, 4831–4835 (2010)CrossRef
9.
go back to reference J.H. Lee, J.H. Park, Y.S. Kim, D.H. Shin, J. Mater. Res. 16, 1227–1230 (2001)CrossRef J.H. Lee, J.H. Park, Y.S. Kim, D.H. Shin, J. Mater. Res. 16, 1227–1230 (2001)CrossRef
10.
11.
go back to reference A. Zribi, A. Clark, L. Zavalij, P. Borgesen, E.J. Cotts, J. Elect. Mater. 30, 1157–1164 (2001)CrossRef A. Zribi, A. Clark, L. Zavalij, P. Borgesen, E.J. Cotts, J. Elect. Mater. 30, 1157–1164 (2001)CrossRef
12.
13.
go back to reference W. Yang, E.Felton. Lawrence, Robert.W. Messler Jr, J. Electron. Mater. 24, 1465–1472 (1995)CrossRef W. Yang, E.Felton. Lawrence, Robert.W. Messler Jr, J. Electron. Mater. 24, 1465–1472 (1995)CrossRef
14.
15.
go back to reference R.W. Wu, L.C. Tsao, S.Y. Chang, C.C. Jain, R.S. Chen, J.Mater Sci. Mater. Electron. 22, 1181–1187 (2011)CrossRef R.W. Wu, L.C. Tsao, S.Y. Chang, C.C. Jain, R.S. Chen, J.Mater Sci. Mater. Electron. 22, 1181–1187 (2011)CrossRef
16.
go back to reference R.J.K. Wassink, (Electrochemical Publications Ltd., Ayr, Scotland, 1989), p. 149 R.J.K. Wassink, (Electrochemical Publications Ltd., Ayr, Scotland, 1989), p. 149
17.
go back to reference T.H. Chuang, M.W. Wu, S.Y. Chang, S.F. Ping, L.C. Tsao, J.Mater. Sci. Mater. Electron. 22, 1021–1027 (2011)CrossRef T.H. Chuang, M.W. Wu, S.Y. Chang, S.F. Ping, L.C. Tsao, J.Mater. Sci. Mater. Electron. 22, 1021–1027 (2011)CrossRef
18.
go back to reference J. Shen, Y.C. Liu, Y.J. Han, Y.M. Tian, H.X. Gao, J. Electron. Mater. 35, 1672–1679 (2006)CrossRef J. Shen, Y.C. Liu, Y.J. Han, Y.M. Tian, H.X. Gao, J. Electron. Mater. 35, 1672–1679 (2006)CrossRef
19.
go back to reference M. Harada, R. Satoh, IEEE Trans. Comp. Hybrids. Manuf. Tech. 13, 736–742 (1990)CrossRef M. Harada, R. Satoh, IEEE Trans. Comp. Hybrids. Manuf. Tech. 13, 736–742 (1990)CrossRef
24.
go back to reference H.L. John, L.H. Pang, X.Q. Xu et al., J Electron Mater 33, 1219–1226 (2004)CrossRef H.L. John, L.H. Pang, X.Q. Xu et al., J Electron Mater 33, 1219–1226 (2004)CrossRef
25.
go back to reference H. Schoeller, S. Bansal, A. Knobloch, D. Shaddock, J. Cho, J Electron Mater 38, 802–809 (2009)CrossRef H. Schoeller, S. Bansal, A. Knobloch, D. Shaddock, J. Cho, J Electron Mater 38, 802–809 (2009)CrossRef
26.
go back to reference G. Zeng, S. Xue, L. Zhang, L. Gao, W. Dai, J. Luo, J Mater Sci. Mater Electron. 21, 421–440 (2010)CrossRef G. Zeng, S. Xue, L. Zhang, L. Gao, W. Dai, J. Luo, J Mater Sci. Mater Electron. 21, 421–440 (2010)CrossRef
28.
go back to reference K. Suganuma, K.S. Kim, S.H. Huh, in International symposium on microelectronics (IMAPS, Washington, DC, 2001), pp. 529–534 K. Suganuma, K.S. Kim, S.H. Huh, in International symposium on microelectronics (IMAPS, Washington, DC, 2001), pp. 529–534
32.
go back to reference X.Y. Liu, M.L. Huang, C.M.L. Wu, L. Wang, J. Mater. Sci.: Mater. Electron. 21, 1046–1054 (2010)CrossRef X.Y. Liu, M.L. Huang, C.M.L. Wu, L. Wang, J. Mater. Sci.: Mater. Electron. 21, 1046–1054 (2010)CrossRef
33.
go back to reference S.M.L. Nai, M. Gupta, J. Wei, in 2nd IEEE international nanoelectronics conference, (2008). pp. 15–19 S.M.L. Nai, M. Gupta, J. Wei, in 2nd IEEE international nanoelectronics conference, (2008). pp. 15–19
34.
35.
go back to reference A.K. Gain, T. Fouzder, Y.C. Chan, K. Winco, C. Yung, J. Alloys Compd. 509, 3319–3325 (2011)CrossRef A.K. Gain, T. Fouzder, Y.C. Chan, K. Winco, C. Yung, J. Alloys Compd. 509, 3319–3325 (2011)CrossRef
Metadata
Title
The morphology and kinetic evolution of intermetallic compounds at Sn–Ag–Cu solder/Cu and Sn–Ag–Cu-0.5Al2O3 composite solder/Cu interface during soldering reaction
Authors
S. Y. Chang
L. C. Tsao
M. W. Wu
C. W. Chen
Publication date
01-01-2012
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2012
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-011-0476-9

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