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Journal of Electronic Materials
Published in: Journal of Electronic Materials 1/2023

18-10-2022 | Original Research Article

Vapor-Phase Epitaxial Growth of Large-Scale High Crystalline Sb2Se3 Nanowires for Photodetector Application

Authors: Guangzhuang Sun, Runze Ling, Yang Cai, Anrong Wang

Published in: Journal of Electronic Materials | Issue 1/2023

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Abstract

One-dimensional (1D) semiconductors have attracted much interest due to their unique structures and unusual properties. The direct vapor growth of high-quality 1D nanowires remains a significant challenge. In this study, high-quality Sb2Se3 nanowires are directly grown on insulating SiO2/Si substrate by improved vapor-phase epitaxy. The x-ray diffraction pattern and Raman spectrum demonstrate the composition of the as-prepared samples. Transmission electron microscopy characterization confirms high crystallization quality of Sb2Se3 nanowires. The electrical transport results show that Sb2Se3 nanowires exhibit electrical properties of a p-type semiconductor and have a current on/off ratio (Ion/Ioff) of ~ 102. The photoelectric test data indicate that Sb2Se3 nanowires have a good optical detection capability. The photoresponsivity is 4.12 A/W for Sb2Se3 nanowires with a diameter of 17 nm and up to 270 A/W for Sb2Se3 nanowires with a diameter of 55 nm, and the fast photoresponse time is less than 8 ms. Together, the as-grown Sb2Se3 nanowires with high quality have potential applications in electronics and optoelectronics.
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Metadata
Title
Vapor-Phase Epitaxial Growth of Large-Scale High Crystalline Sb2Se3 Nanowires for Photodetector Application
Authors
Guangzhuang Sun
Runze Ling
Yang Cai
Anrong Wang
Publication date
18-10-2022
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 1/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-022-09995-9

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