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Microsystem Technologies
Published in: Microsystem Technologies 9-11/2008

01-10-2008 | Technical Paper

Aqueous base developable: easy stripping, high aspect ratio negative photoresist for optical and proton beam lithography

Authors: M. Chatzichristidi, I. Rajta, Th. Speliotis, E. Valamontes, D. Goustouridis, P. Argitis, I. Raptis

Published in: Microsystem Technologies | Issue 9-11/2008

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Abstract

A variety of different photo resists are used for the fabrication of polymer and metal high aspect ratio structures. Among them SU-8, a chemically amplified negative tone photoresist is the mostly used. However, after processing the finished resist pattern (SU-8) is hardly removed from the substrate. In the present work the formulation and process optimization of a negative tone chemically amplified photoresist (TADEP) is presented. TADEP resist owns two advantages: the dissolution of the uncrosslinked areas in IC standard aqueous developers and the easy stripping in acetone by the assistance of ultrasonic bath. The TADEP resist is successfully applied for the fabrication of polymer and metal structures, after electroplating and stripping and also in the case of Proton Beam Writing.
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Literature
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Metadata
Title
Aqueous base developable: easy stripping, high aspect ratio negative photoresist for optical and proton beam lithography
Authors
M. Chatzichristidi
I. Rajta
Th. Speliotis
E. Valamontes
D. Goustouridis
P. Argitis
I. Raptis
Publication date
01-10-2008
Publisher
Springer-Verlag
Published in
Microsystem Technologies / Issue 9-11/2008
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-008-0571-x

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