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Journal of Electronic Materials
Published in: Journal of Electronic Materials 1/2023

14-11-2022 | Original Research Article

Growth and Characterization of High-Quality Orthorhombic Phase CsPbBr3 Perovskite Single Crystals for Optoelectronic Applications

Authors: P. Sujith, M. Pratheek, Saidi Reddy Parne, P. Predeep

Published in: Journal of Electronic Materials | Issue 1/2023

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Abstract

Caesium lead bromide (CsPbBr3) has received a lot of interest as a model compound suitable for photovoltaics and many other optoelectronic applications. However, growing significant volumes of CsPbBr3 single crystals is difficult. Herein, a facile room temperature crystal growth strategy is used to generate high-quality and large single crystals of single-phase orthorhombic-CsPbBr3 perovskite at room temperature. The optical, structural, and electrical properties of this crystal are also studied here. It has been found that the single crystals grown at room temperature show better thermal stability and complete sublimation without any decomposition leaving a clue that this material can be thermally deposited into thin films with ease. This significant aspect has also been successfully verified here by thermally depositing a fine and high-quality film of CsPbBr3 using single-crystal powder as the source.

Graphical Abstract

previous article Hot Extruded Bulk Polycrystalline (Bi1-xSbx)2(Te1-ySey)3 Alloys: Electron Transport and Lattice Thermal Conductivity
next article Studies on the Material and Photoluminescence Characteristics of the Structure of Al0.9Ga0.1As/GaAs DBR with Varied Doping

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Appendix
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Metadata
Title
Growth and Characterization of High-Quality Orthorhombic Phase CsPbBr3 Perovskite Single Crystals for Optoelectronic Applications
Authors
P. Sujith
M. Pratheek
Saidi Reddy Parne
P. Predeep
Publication date
14-11-2022
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 1/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-022-10042-w

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